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| Hauptseite > Publikationsdatenbank > Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices > print |
| Hauptseite > Publikationsdatenbank > Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices > print |
| 001 | 861107 | ||
| 005 | 20210130000718.0 | ||
| 024 | 7 | _ | |a 10.1109/TED.2019.2892997 |2 doi |
| 024 | 7 | _ | |a 0018-9383 |2 ISSN |
| 024 | 7 | _ | |a 0096-2430 |2 ISSN |
| 024 | 7 | _ | |a 0197-6370 |2 ISSN |
| 024 | 7 | _ | |a 1557-9646 |2 ISSN |
| 024 | 7 | _ | |a 2379-8653 |2 ISSN |
| 024 | 7 | _ | |a 2379-8661 |2 ISSN |
| 024 | 7 | _ | |a WOS:000460970400020 |2 WOS |
| 037 | _ | _ | |a FZJ-2019-01672 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |a La Torre, Camilla |0 0000-0003-1874-9864 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices |
| 260 | _ | _ | |a New York, NY |c 2019 |b IEEE |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1582019274_521 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Physics-based compact models for redox-based resistive switching memory (ReRAM) devices are used to increase the physical understanding of the complex switching process as well as to allow for accurate circuit simulations. This includes that models have to cover devices showing bipolar switching (BS) and complementary switching (CS). In contrast to BS devices, which store the information in (at least) one high and one low resistance state, CS devices use (at least) two high resistance states. Applications of CS devices range from passive crossbar arrays to novel logic-in-memory concepts. The coexistence of CS and BS modes in one device has been shown experimentally. Here, a physics-based compact model describing BS and CS consistently is presented. Besides modeling CS devices, the model improves the description of BS as it allows to reproduce and explain anomalies in the BS RESET process. The model includes ion drift and diffusion along the filament. The influence of different parameters on the drift–diffusion balance is discussed. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |a Zurhelle, Alexander F. |0 0000-0002-8179-9605 |b 1 |
| 700 | 1 | _ | |a Breuer, Thomas |0 P:(DE-Juel1)157669 |b 2 |
| 700 | 1 | _ | |a Waser, R. |0 P:(DE-Juel1)131022 |b 3 |
| 700 | 1 | _ | |a Menzel, Stephan |0 P:(DE-Juel1)158062 |b 4 |
| 773 | _ | _ | |a 10.1109/TED.2019.2892997 |g p. 1 - 8 |0 PERI:(DE-600)2028088-9 |n 3 |p 1268 - 1275 |t IEEE transactions on electron devices |v 66 |y 2019 |x 1557-9646 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/861107/files/08630083.pdf |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/861107/files/08630083.pdf?subformat=pdfa |x pdfa |y Restricted |
| 909 | C | O | |p VDB |o oai:juser.fz-juelich.de:861107 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)131022 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)158062 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2019 |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b IEEE T ELECTRON DEV : 2017 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0600 |2 StatID |b Ebsco Academic Search |
| 915 | _ | _ | |a Peer Review |0 StatID:(DE-HGF)0030 |2 StatID |b ASC |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Clarivate Analytics Master Journal List |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1160 |2 StatID |b Current Contents - Engineering, Computing and Technology |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-10-20170113 |k PGI-10 |l JARA Institut Green IT |x 2 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-10-20170113 |
| 980 | _ | _ | |a UNRESTRICTED |
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