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@ARTICLE{Rodenbcher:861244,
      author       = {Rodenbücher, Christian and Menzel, Stephan and Wrana,
                      Dominik and Gensch, Thomas and Korte, Carsten and Krok,
                      Franciszek and Szot, Krzysztof},
      title        = {{C}urrent channeling along extended defects during
                      electroreduction of {S}r{T}i{O}3},
      journal      = {Scientific reports},
      volume       = {9},
      number       = {1},
      issn         = {2045-2322},
      address      = {[London]},
      publisher    = {Macmillan Publishers Limited, part of Springer Nature},
      reportid     = {FZJ-2019-01748},
      pages        = {2502},
      year         = {2019},
      abstract     = {Electroreduction experiments on metal oxides are well
                      established for investigating the nature of the material
                      change in memresistive devices, whose basic working
                      principle is an electrically-induced reduction. While
                      numerous research studies on this topic have been conducted,
                      the influence of extended defects such as dislocations has
                      not been addressed in detail hitherto. Here, we show by
                      employing thermal microscopy to detect local Joule heating
                      effects in the first stage of electroreduction of SrTiO3
                      that the current is channelled along extended defects such
                      as dislocations which were introduced mechanically by
                      scratching or sawing. After prolonged degradation, the
                      matrix of the crystal is also electroreduced and the
                      influence of the initially present dislocations diminished.
                      At this stage, a hotspot at the anode develops due to
                      stoichiometry polarisation leading not only to the gliding
                      of existing dislocations, but also to the evolution of new
                      dislocations. Such a formation is caused by electrical and
                      thermal stress showing dislocations may play a significant
                      role in resistive switching effects.},
      cin          = {ICS-4 / IEK-3 / PGI-7},
      ddc          = {600},
      cid          = {I:(DE-Juel1)ICS-4-20110106 / I:(DE-Juel1)IEK-3-20101013 /
                      I:(DE-Juel1)PGI-7-20110106},
      pnm          = {552 - Engineering Cell Function (POF3-552)},
      pid          = {G:(DE-HGF)POF3-552},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30792458},
      UT           = {WOS:000459281500071},
      doi          = {10.1038/s41598-019-39372-2},
      url          = {https://juser.fz-juelich.de/record/861244},
}