%0 Journal Article
%A Aeberhard, Urs
%T Nonequilibrium Green's function picture of nonradiative recombination of the Shockley-Read-Hall type
%J Physical review / B
%V 99
%N 12
%@ 2469-9950
%C Woodbury, NY
%I Inst.
%M FZJ-2019-01962
%P 125302
%D 2019
%X A quantum-kinetic picture of Shockley-Read-Hall-type (SRH) defect-mediated recombination is derived within the nonequilibrium Green's function formalism for an optoelectronic device with selectively contacted, current-carrying extended states and a localized deep defect state in the energy gap. The theory is first tested for recombination from bulk band states and then implemented for defective bipolar homo- and heterojunction thin-film devices with realistic spatial variation of the band edge profile. While the quantum-kinetic treatment reproduces the semiclassical characteristics for a bulk absorber in flat-band and quasiequilibrium conditions, for which the conventional SRH picture is valid, it reveals nonclassical features such as recombination enhancement by tunneling into field-induced subgap states in the presence of large fields, or the complex recombination current flow at heterointerfaces. Being fully compatible with the rigorous treatment of electron-photon and electron-phonon scattering in the nonequilibrium Green's function (NEGF) formalism, the approach enables a consistent inclusion of defect-mediated nonradiative recombination in comprehensive NEGF simulations of nanostructure-based quantum optoelectronic devices such as quantum well lasers, LEDs and solar cells.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000461963800012
%R 10.1103/PhysRevB.99.125302
%U https://juser.fz-juelich.de/record/861501