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@ARTICLE{Aeberhard:861501,
      author       = {Aeberhard, Urs},
      title        = {{N}onequilibrium {G}reen's function picture of nonradiative
                      recombination of the {S}hockley-{R}ead-{H}all type},
      journal      = {Physical review / B},
      volume       = {99},
      number       = {12},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2019-01962},
      pages        = {125302},
      year         = {2019},
      abstract     = {A quantum-kinetic picture of Shockley-Read-Hall-type (SRH)
                      defect-mediated recombination is derived within the
                      nonequilibrium Green's function formalism for an
                      optoelectronic device with selectively contacted,
                      current-carrying extended states and a localized deep defect
                      state in the energy gap. The theory is first tested for
                      recombination from bulk band states and then implemented for
                      defective bipolar homo- and heterojunction thin-film devices
                      with realistic spatial variation of the band edge profile.
                      While the quantum-kinetic treatment reproduces the
                      semiclassical characteristics for a bulk absorber in
                      flat-band and quasiequilibrium conditions, for which the
                      conventional SRH picture is valid, it reveals nonclassical
                      features such as recombination enhancement by tunneling into
                      field-induced subgap states in the presence of large fields,
                      or the complex recombination current flow at
                      heterointerfaces. Being fully compatible with the rigorous
                      treatment of electron-photon and electron-phonon scattering
                      in the nonequilibrium Green's function (NEGF) formalism, the
                      approach enables a consistent inclusion of defect-mediated
                      nonradiative recombination in comprehensive NEGF simulations
                      of nanostructure-based quantum optoelectronic devices such
                      as quantum well lasers, LEDs and solar cells.},
      cin          = {IEK-5 / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / $I:(DE-82)080012_20140620$},
      pnm          = {121 - Solar cells of the next generation (POF3-121) /
                      Ab-initio description of charge carrier dynamics at
                      defective interfaces in solar cells $(jiek50_20171101)$},
      pid          = {G:(DE-HGF)POF3-121 / $G:(DE-Juel1)jiek50_20171101$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000461963800012},
      doi          = {10.1103/PhysRevB.99.125302},
      url          = {https://juser.fz-juelich.de/record/861501},
}