001     861501
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024 7 _ |a 10.1103/PhysRevB.99.125302
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024 7 _ |a 2469-9950
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037 _ _ |a FZJ-2019-01962
082 _ _ |a 530
100 1 _ |a Aeberhard, Urs
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245 _ _ |a Nonequilibrium Green's function picture of nonradiative recombination of the Shockley-Read-Hall type
260 _ _ |a Woodbury, NY
|c 2019
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520 _ _ |a A quantum-kinetic picture of Shockley-Read-Hall-type (SRH) defect-mediated recombination is derived within the nonequilibrium Green's function formalism for an optoelectronic device with selectively contacted, current-carrying extended states and a localized deep defect state in the energy gap. The theory is first tested for recombination from bulk band states and then implemented for defective bipolar homo- and heterojunction thin-film devices with realistic spatial variation of the band edge profile. While the quantum-kinetic treatment reproduces the semiclassical characteristics for a bulk absorber in flat-band and quasiequilibrium conditions, for which the conventional SRH picture is valid, it reveals nonclassical features such as recombination enhancement by tunneling into field-induced subgap states in the presence of large fields, or the complex recombination current flow at heterointerfaces. Being fully compatible with the rigorous treatment of electron-photon and electron-phonon scattering in the nonequilibrium Green's function (NEGF) formalism, the approach enables a consistent inclusion of defect-mediated nonradiative recombination in comprehensive NEGF simulations of nanostructure-based quantum optoelectronic devices such as quantum well lasers, LEDs and solar cells.
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536 _ _ |a Ab-initio description of charge carrier dynamics at defective interfaces in solar cells (jiek50_20171101)
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542 _ _ |i 2019-03-18
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773 _ _ |a 10.1103/PhysRevB.99.125302
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856 4 _ |u https://juser.fz-juelich.de/record/861501/files/PhysRevB.99.125302.pdf
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