| Home > Publications database > Nonequilibrium Green's function picture of nonradiative recombination of the Shockley-Read-Hall type > print |
| 001 | 861501 | ||
| 005 | 20240712084521.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevB.99.125302 |2 doi |
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| 100 | 1 | _ | |a Aeberhard, Urs |0 P:(DE-Juel1)130210 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Nonequilibrium Green's function picture of nonradiative recombination of the Shockley-Read-Hall type |
| 260 | _ | _ | |a Woodbury, NY |c 2019 |b Inst. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a A quantum-kinetic picture of Shockley-Read-Hall-type (SRH) defect-mediated recombination is derived within the nonequilibrium Green's function formalism for an optoelectronic device with selectively contacted, current-carrying extended states and a localized deep defect state in the energy gap. The theory is first tested for recombination from bulk band states and then implemented for defective bipolar homo- and heterojunction thin-film devices with realistic spatial variation of the band edge profile. While the quantum-kinetic treatment reproduces the semiclassical characteristics for a bulk absorber in flat-band and quasiequilibrium conditions, for which the conventional SRH picture is valid, it reveals nonclassical features such as recombination enhancement by tunneling into field-induced subgap states in the presence of large fields, or the complex recombination current flow at heterointerfaces. Being fully compatible with the rigorous treatment of electron-photon and electron-phonon scattering in the nonequilibrium Green's function (NEGF) formalism, the approach enables a consistent inclusion of defect-mediated nonradiative recombination in comprehensive NEGF simulations of nanostructure-based quantum optoelectronic devices such as quantum well lasers, LEDs and solar cells. |
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| 536 | _ | _ | |a Ab-initio description of charge carrier dynamics at defective interfaces in solar cells (jiek50_20171101) |0 G:(DE-Juel1)jiek50_20171101 |c jiek50_20171101 |f Ab-initio description of charge carrier dynamics at defective interfaces in solar cells |x 1 |
| 542 | _ | _ | |i 2019-03-18 |2 Crossref |u https://link.aps.org/licenses/aps-default-license |
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| 773 | 1 | 8 | |a 10.1103/physrevb.99.125302 |b American Physical Society (APS) |d 2019-03-18 |n 12 |p 125302 |3 journal-article |2 Crossref |t Physical Review B |v 99 |y 2019 |x 2469-9950 |
| 773 | _ | _ | |a 10.1103/PhysRevB.99.125302 |g Vol. 99, no. 12, p. 125302 |0 PERI:(DE-600)2844160-6 |n 12 |p 125302 |t Physical review / B |v 99 |y 2019 |x 2469-9950 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/861501/files/PhysRevB.99.125302.pdf |y OpenAccess |
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