TY  - JOUR
AU  - Botzem, Tim
AU  - Shulman, Michael D.
AU  - Foletti, Sandra
AU  - Harvey, Shannon P.
AU  - Dial, Oliver E.
AU  - Bethke, Patrick
AU  - Cerfontaine, Pascal
AU  - McNeil, Robert P. G.
AU  - Mahalu, Diana
AU  - Umansky, Vladimir
AU  - Ludwig, Arne
AU  - Wieck, Andreas
AU  - Schuh, Dieter
AU  - Bougeard, Dominique
AU  - Yacoby, Amir
AU  - Bluhm, Hendrik
TI  - Tuning Methods for Semiconductor Spin Qubits
JO  - Physical review applied
VL  - 10
IS  - 5
SN  - 2331-7019
CY  - College Park, Md. [u.a.]
PB  - American Physical Society
M1  - FZJ-2019-02008
SP  - 054026
PY  - 2018
AB  - We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are developed for double quantum dots in GaAs heterostructures, but they can easily be adapted to other quantum-dot-based qubit systems. These tuning procedures include the characterization of the interdot tunnel coupling, the tunnel coupling to the surrounding leads, and the identification of various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot’s parameters will only grow in the near future, once the multiqubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds and require almost no human interference.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000449792500004
DO  - DOI:10.1103/PhysRevApplied.10.054026
UR  - https://juser.fz-juelich.de/record/861557
ER  -