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@ARTICLE{Klos:861559,
author = {Klos, Jan and Hassler, Fabian and Cerfontaine, Pascal and
Bluhm, Hendrik and Schreiber, Lars R.},
title = {{C}alculation of tunnel couplings in open gate-defined
disordered quantum dot systems},
journal = {Physical review / B},
volume = {98},
number = {15},
issn = {2469-9950},
address = {Woodbury, NY},
publisher = {Inst.},
reportid = {FZJ-2019-02010},
pages = {155320},
year = {2018},
abstract = {Quantum computation based on semiconductor electron-spin
qubits requires high control of tunnel couplings between the
quantum dots and the electron reservoirs. Potential disorder
and the increasing complexity of the two-dimensional
gate-defined quantum computing devices set high demands on
the gate design and the voltage tuning of the tunnel
barriers. We present a Green's formalism approach for the
calculation of tunnel couplings between a quantum dot and a
reservoir. Our method takes into account in full detail the
two-dimensional electrostatic potential of the quantum dot,
the tunnel barrier, and the reservoir. A wideband limit is
employed only far away from the tunnel barrier region where
the density of states is sufficiently large. We calculate
the tunnel coupling including potential disorder effects,
which become increasingly important for large-scale
silicon-based spin-qubit devices. Studying the tunnel
couplings of a single-electron transistor in Si/SiGe as a
showcase, we find that charged defects are the dominant
source of disorder leading to variations in the tunnel
coupling of four orders of magnitude.},
cin = {PGI-11 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-11-20170113 / $I:(DE-82)080009_20140620$},
pnm = {144 - Controlling Collective States (POF3-144)},
pid = {G:(DE-HGF)POF3-144},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000448453400002},
doi = {10.1103/PhysRevB.98.155320},
url = {https://juser.fz-juelich.de/record/861559},
}