TY  - JOUR
AU  - von den Driesch, Nils
AU  - Stange, Daniela
AU  - Rainko, Denis
AU  - Breuer, Uwe
AU  - Capellini, Giovanni
AU  - Hartmann, Jean-Michel
AU  - Sigg, Hans
AU  - Mantl, Siegfried
AU  - Grützmacher, Detlev
AU  - Buca, Dan
TI  - Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
JO  - Solid state electronics
VL  - 155
SN  - 0038-1101
CY  - Oxford [u.a.]
PB  - Pergamon, Elsevier Science
M1  - FZJ-2019-02044
SP  - 139-143
PY  - 2019
AB  - The recent rise of GeSn-based optically pumped lasers have multiplied the efforts to fabricate a fully CMOS compatible and group IV-based light emitter. Their integration with Si-based electronics may yield heavily reduced power consumption in integrated circuits and pave the way towards new sensing or medical applications. Here, we discuss the epitaxy of group IV GeSn and SiGeSn semiconductors and show their suitability for light emitting applications. Double and multi quantum well heterostructures are evaluated, whereby the latter enables an inherently easier control over the formation of deleterious misfit defects. Consequently, microdisk lasers fabricated from those show greatly enhanced light emission and reduced lasing thresholds. The use of in-situ p-i-n doping schemes allow the formation of light emitting diodes, resulting in electrically-enabled light emission already at room temperature.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000466840600020
DO  - DOI:10.1016/j.sse.2019.03.013
UR  - https://juser.fz-juelich.de/record/861594
ER  -