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@ARTICLE{vondenDriesch:861594,
      author       = {von den Driesch, Nils and Stange, Daniela and Rainko, Denis
                      and Breuer, Uwe and Capellini, Giovanni and Hartmann,
                      Jean-Michel and Sigg, Hans and Mantl, Siegfried and
                      Grützmacher, Detlev and Buca, Dan},
      title        = {{E}pitaxy of {S}i-{G}e-{S}n-based heterostructures for
                      {CMOS}-integratable light emitters},
      journal      = {Solid state electronics},
      volume       = {155},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2019-02044},
      pages        = {139-143},
      year         = {2019},
      abstract     = {The recent rise of GeSn-based optically pumped lasers have
                      multiplied the efforts to fabricate a fully CMOS compatible
                      and group IV-based light emitter. Their integration with
                      Si-based electronics may yield heavily reduced power
                      consumption in integrated circuits and pave the way towards
                      new sensing or medical applications. Here, we discuss the
                      epitaxy of group IV GeSn and SiGeSn semiconductors and show
                      their suitability for light emitting applications. Double
                      and multi quantum well heterostructures are evaluated,
                      whereby the latter enables an inherently easier control over
                      the formation of deleterious misfit defects. Consequently,
                      microdisk lasers fabricated from those show greatly enhanced
                      light emission and reduced lasing thresholds. The use of
                      in-situ p-i-n doping schemes allow the formation of light
                      emitting diodes, resulting in electrically-enabled light
                      emission already at room temperature.},
      cin          = {PGI-10 / PGI-9 / JARA-FIT / ZEA-3},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-10-20170113 / I:(DE-Juel1)PGI-9-20110106 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000466840600020},
      doi          = {10.1016/j.sse.2019.03.013},
      url          = {https://juser.fz-juelich.de/record/861594},
}