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@ARTICLE{Lbl:861620,
      author       = {Löbl, Matthias C. and Scholz, Sven and Söllner, Immo and
                      Ritzmann, Julian and Denneulin, Thibaud and Kovacs, Andras
                      and Kardynal, Beata and Wieck, Andreas D. and Ludwig, Arne
                      and Warburton, Richard J.},
      title        = {{E}xcitons in {I}n{G}a{A}s {Q}uantum {D}ots without
                      {E}lectron {W}etting {L}ayer {S}tates},
      reportid     = {FZJ-2019-02066},
      year         = {2018},
      abstract     = {The Stranski-Krastanov (SK) growth-mode facilitates the
                      self-assembly of quantum dots (QDs) using lattice-mismatched
                      semiconductors, for instance InAs and GaAs. SK QDs are
                      defect-free and can be embedded in heterostructures and
                      nano-engineered devices. InAs QDs are excellent photon
                      emitters: QD-excitons, electron-hole bound pairs, are
                      exploited as emitters of high quality single photons for
                      quantum communication. One significant drawback of the
                      SK-mode is the wetting layer (WL). The WL results in a
                      continuum rather close in energy to the QD-confined-states.
                      The WL-states lead to unwanted scattering and dephasing
                      processes of QD-excitons. Here, we report that a slight
                      modification to the SK-growth-protocol of InAs on GaAs -- we
                      add a monolayer of AlAs following InAs QD formation --
                      results in a radical change to the QD-excitons. Extensive
                      characterisation demonstrates that this additional layer
                      eliminates the WL-continuum for electrons enabling the
                      creation of highly charged excitons where up to six
                      electrons occupy the same QD. Single QDs grown with this
                      protocol exhibit optical linewidths matching those of the
                      very best SK QDs making them an attractive alternative to
                      standard InGaAs QDs.},
      cin          = {PGI-9 / PGI-5 / ER-C-1},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-5-20110106 /
                      I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)25},
      eprint       = {1810.00891},
      howpublished = {arXiv:1810.00891},
      archivePrefix = {arXiv},
      SLACcitation = {$\%\%CITATION$ = $arXiv:1810.00891;\%\%$},
      url          = {https://juser.fz-juelich.de/record/861620},
}