000861715 001__ 861715
000861715 005__ 20210325103008.0
000861715 0247_ $$2Handle$$a2128/21941
000861715 0247_ $$2ISSN$$a1866-1807
000861715 020__ $$a978-3-95806-389-1
000861715 037__ $$aFZJ-2019-02145
000861715 041__ $$aEnglish
000861715 1001_ $$0P:(DE-Juel1)161180$$aStange, Daniela$$b0$$eCorresponding author$$gfemale$$ufzj
000861715 245__ $$aGroup IV (Si)GeSn Light Emission and Lasing Studies$$f- 2019-02-22
000861715 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2019
000861715 300__ $$aVI, 151 S.
000861715 3367_ $$2DataCite$$aOutput Types/Dissertation
000861715 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
000861715 3367_ $$2ORCID$$aDISSERTATION
000861715 3367_ $$2BibTeX$$aPHDTHESIS
000861715 3367_ $$02$$2EndNote$$aThesis
000861715 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1553851887_2542
000861715 3367_ $$2DRIVER$$adoctoralThesis
000861715 4900_ $$aSchriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies$$v193
000861715 502__ $$aRWTH Aachen, Diss., 2019$$bDr.$$cRWTH Aachen$$d2019
000861715 520__ $$aTo enable the continuous evolution of information technology, increasing data transferrates are demanded. This is accompanied by rising power consumption and requisition of larger bandwidths. The integration of photonics with electronic circuits provides a solution, which facilitates the decrease of heat dissipation and allows transmitting data in parallel with the speed of light, boosting the performance of integrated circuits. Such a concept is preferably realized within the highly elaborated silicon processing technology, on which the whole information technology is based on. The most pressing issue, missing for the fully integration of photonics to electronics, is an integrated light source. Silicon-germanium-tin (SiGeSn) alloys offer a promising extension of this platform, since they can be monolithically grownon Si and their direct bandgap in specific configurations was proven in 2015. This thesis summarizes studies on spontaneous and stimulated emission of GeSn alloys mainly based on photoluminescence (PL) and electroluminescence (EL) spectroscopy. The effect of strain relaxation in GeSn alloys, grown on top of Ge virtual substrates, on optical properties is investigated. The temperature trend of spontaneous emission provides insight on the contribution of non-radiative defect recombination. It also illustrates the indirect-to-direct bandgap transition in Ge$_{0.87}$5Sn$_{0.125}$ alloys under strain relaxation. Heterostructure PL analysis emphasizes the importance of defect engineering, since presence of defects close to the active layer heavily deteriorates light emission. To prove the concept of electrical carrier injection, GeSn-based LEDs are fabricated. Electroluminescence spectra unveil similar temperature dependent behavior as PL from unprocessed layers, with comparable defect-induced limitations. The examination of Ge and SiGeSn as barrier materials in multi-quantum-wells (MQWs) proves [...]
000861715 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000861715 8564_ $$uhttps://juser.fz-juelich.de/record/861715/files/Schluesseltech_193.pdf$$yOpenAccess
000861715 8564_ $$uhttps://juser.fz-juelich.de/record/861715/files/Schluesseltech_193.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000861715 909CO $$ooai:juser.fz-juelich.de:861715$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000861715 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000861715 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000861715 9141_ $$y2019
000861715 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161180$$aForschungszentrum Jülich$$b0$$kFZJ
000861715 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000861715 920__ $$lyes
000861715 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000861715 980__ $$aphd
000861715 980__ $$aVDB
000861715 980__ $$aUNRESTRICTED
000861715 980__ $$abook
000861715 980__ $$aI:(DE-Juel1)PGI-9-20110106
000861715 9801_ $$aFullTexts