% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@PHDTHESIS{Stange:861715,
      author       = {Stange, Daniela},
      title        = {{G}roup {IV} ({S}i){G}e{S}n {L}ight {E}mission and {L}asing
                      {S}tudies},
      volume       = {193},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2019-02145},
      isbn         = {978-3-95806-389-1},
      series       = {Schriften des Forschungszentrums Jülich. Reihe
                      Schlüsseltechnologien / Key Technologies},
      pages        = {VI, 151 S.},
      year         = {2019},
      note         = {RWTH Aachen, Diss., 2019},
      abstract     = {To enable the continuous evolution of information
                      technology, increasing data transferrates are demanded. This
                      is accompanied by rising power consumption and requisition
                      of larger bandwidths. The integration of photonics with
                      electronic circuits provides a solution, which facilitates
                      the decrease of heat dissipation and allows transmitting
                      data in parallel with the speed of light, boosting the
                      performance of integrated circuits. Such a concept is
                      preferably realized within the highly elaborated silicon
                      processing technology, on which the whole information
                      technology is based on. The most pressing issue, missing for
                      the fully integration of photonics to electronics, is an
                      integrated light source. Silicon-germanium-tin (SiGeSn)
                      alloys offer a promising extension of this platform, since
                      they can be monolithically grownon Si and their direct
                      bandgap in specific configurations was proven in 2015. This
                      thesis summarizes studies on spontaneous and stimulated
                      emission of GeSn alloys mainly based on photoluminescence
                      (PL) and electroluminescence (EL) spectroscopy. The effect
                      of strain relaxation in GeSn alloys, grown on top of Ge
                      virtual substrates, on optical properties is investigated.
                      The temperature trend of spontaneous emission provides
                      insight on the contribution of non-radiative defect
                      recombination. It also illustrates the indirect-to-direct
                      bandgap transition in Ge$_{0.87}$5Sn$_{0.125}$ alloys under
                      strain relaxation. Heterostructure PL analysis emphasizes
                      the importance of defect engineering, since presence of
                      defects close to the active layer heavily deteriorates light
                      emission. To prove the concept of electrical carrier
                      injection, GeSn-based LEDs are fabricated.
                      Electroluminescence spectra unveil similar temperature
                      dependent behavior as PL from unprocessed layers, with
                      comparable defect-induced limitations. The examination of Ge
                      and SiGeSn as barrier materials in multi-quantum-wells
                      (MQWs) proves [...]},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/861715},
}