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Conference Presentation (Other) FZJ-2019-02513
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Dislocation bending in GaN/step-graded (Al,Ga)N/AIN buffer layers on Si(111) investigated by STM and STEM

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2019

DPG Frühjahrstagung, RegensburgRegensburg, Germany, 31 Mar 2019 - 6 Apr 20192019-03-312019-04-06

Contributing Institute(s):
  1. Mikrostrukturforschung (PGI-5)
Research Program(s):
  1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2019
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Document types > Presentations > Conference Presentations
Institute Collections > ER-C > ER-C-1
Institute Collections > PGI > PGI-5
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 Record created 2019-04-08, last modified 2024-06-10
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