000862552 001__ 862552
000862552 005__ 20210130001446.0
000862552 0247_ $$2doi$$a10.1016/j.tsf.2019.04.037
000862552 0247_ $$2ISSN$$a0040-6090
000862552 0247_ $$2ISSN$$a1879-2731
000862552 0247_ $$2WOS$$aWOS:000467389900015
000862552 037__ $$aFZJ-2019-02846
000862552 082__ $$a660
000862552 1001_ $$0P:(DE-HGF)0$$aTryus, Maksym$$b0$$eCorresponding author
000862552 245__ $$aOptical and structural characterization of orthorhombic LaLuO3 using extreme ultraviolet reflectometry
000862552 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2019
000862552 3367_ $$2DRIVER$$aarticle
000862552 3367_ $$2DataCite$$aOutput Types/Journal article
000862552 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1557206369_29566
000862552 3367_ $$2BibTeX$$aARTICLE
000862552 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000862552 3367_ $$00$$2EndNote$$aJournal Article
000862552 520__ $$aA thin orthorhombic LaLuO film, grown on SrTiO substrate by pulsed laser deposition, is characterized using multi-angle spectralextreme ultraviolet reflectometry (EUVR). Layer structure parameters and optical constants of LaLuO are determined simultaneously byfitting angular reflectivity curves in a wide spectral range (70–200 eV). From near-edge optical constant analysis, La:Lu stoichiometryratio and the film density are derived. Sample structure is additionally analyzed using XRR, AFM and TEM methods. EUVR as a methodof structural characterization is discussed in comparison with XRR. Correlation error analysis of the layer structure parameters,obtained from independent EUVR and XRR fits, is presented.
000862552 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000862552 588__ $$aDataset connected to CrossRef
000862552 7001_ $$0P:(DE-HGF)0$$aNikolaev, Konstantin V.$$b1
000862552 7001_ $$0P:(DE-HGF)0$$aMakhotkin, Igor A.$$b2
000862552 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b3
000862552 7001_ $$0P:(DE-Juel1)169107$$aKibkalo, Lidia$$b4
000862552 7001_ $$0P:(DE-HGF)0$$aDanylyuk, Serhiy$$b5
000862552 7001_ $$0P:(DE-HGF)0$$aGiglia, Angelo$$b6
000862552 7001_ $$0P:(DE-HGF)0$$aNicolosi, Piergiorgio$$b7
000862552 7001_ $$0P:(DE-Juel1)157957$$aJuschkin, Larissa$$b8
000862552 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2019.04.037$$gVol. 680, p. 94 - 101$$p94 - 101$$tThin solid films$$v680$$x0040-6090$$y2019
000862552 909CO $$ooai:juser.fz-juelich.de:862552$$pVDB
000862552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128631$$aForschungszentrum Jülich$$b3$$kFZJ
000862552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)169107$$aForschungszentrum Jülich$$b4$$kFZJ
000862552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)157957$$aForschungszentrum Jülich$$b8$$kFZJ
000862552 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000862552 9141_ $$y2019
000862552 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000862552 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bTHIN SOLID FILMS : 2017
000862552 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000862552 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000862552 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000862552 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000862552 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000862552 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000862552 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000862552 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000862552 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000862552 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000862552 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000862552 920__ $$lyes
000862552 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000862552 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000862552 980__ $$ajournal
000862552 980__ $$aVDB
000862552 980__ $$aI:(DE-Juel1)PGI-9-20110106
000862552 980__ $$aI:(DE-82)080009_20140620
000862552 980__ $$aUNRESTRICTED