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@MASTERSTHESIS{Nagda:862659,
      author       = {Nagda, Gunjan},
      othercontributors = {Lepsa, Mihail Ion},
      title        = {{MBE} growth and characterization of {I}n{A}s/{G}a{S}b
                      core/shell nanowire arrays},
      school       = {RWTH Aachen},
      type         = {Masterarbeit},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich},
      reportid     = {FZJ-2019-02915,},
      pages        = {101},
      year         = {2019},
      note         = {Masterarbeit, RWTH Aachen, 2019},
      abstract     = {III-V semiconductor compounds InAs and GaSb are almost
                      lattice matched and when incontact, the heterostructure
                      appears to have a broken gap alignment at their
                      interface[1].In a core/shell nanowire (NW) geometry, these
                      particularities make this combination interestingfor low
                      power electronic devices (Tunneling Field Effect
                      Transistors) as well as thestudy of fundamental physical
                      properties such as quantum effects arising due to
                      electroninterference. This thesis reports on the MBE growth
                      as well as the structural and electricalcharacterization of
                      InAs/GaSb NW arrays.For the growth, a Si(111) substrate is
                      covered with a thin thermal SiO2 film in
                      whichtwo-dimensional, periodic arrays of nano-sized holes
                      are patterned. The InAs NW growth isoptimized regarding the
                      yield and morphology of the wires. Substrate preparation
                      therebyis crucial for achieving a high NW yield. The
                      subsequent growth of the GaSb shell hasbeen investigated and
                      optimum growth conditions have been achieved. The effect of
                      dopingof the GaSb shell and substrate temperature, during
                      shell deposition, is also studied.NW morphology and
                      structural characteristics have been investigated. The small
                      latticemismatch between InAs and GaSb combined with the
                      one-dimensional geometry result in amisfit dislocation free
                      coreshell NW hetero-interface.Post-growth, the GaSb shell is
                      etched from part of the NW to have access to the InAscore in
                      order to study the transport at the hetero-junction. Dry and
                      wet etching techniquesprovide different results, both of
                      which can be used for fabricating NW devices.
                      Metalliccontacts have been fabricated on different parts of
                      these partially etched core/shell NWs aswell as on
                      non-etched wires. This process is optimized for the
                      dimensions of these core/shellNWs with respect to
                      reproducibility.Electrical characterization includes gate
                      dependent measurements, which have been carriedout at room
                      temperature as well as at low temperatures down to 1.5K
                      using a cryogenicsetup. Magneto-transport measurements are
                      used to probe electron transport in thesenanoscopic systems.
                      Characterization therefore includes the observation of
                      quantum mechanicalelectron interference effects probed at
                      different temperatures and different anglesof the magnetic
                      field with respect to the NW axis. Analysis on this data
                      includes approximationsof typical figures of merit like the
                      phase coherence length or the elastic mean freepath but also
                      includes a proper analysis of the size and possible
                      locations of the electroninterference loops.},
      cin          = {PGI-9 / PGI-10 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)29 / PUB:(DE-HGF)19},
      url          = {https://juser.fz-juelich.de/record/862659},
}