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@PHDTHESIS{Zhang:862756,
      author       = {Zhang, Hehe},
      title        = {{R}esistive switching phenomena in stacks of binary
                      transition metal oxides grown by atomic layer deposition},
      volume       = {57},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2019-02998},
      isbn         = {978-3-95806-399-0},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / Information},
      pages        = {IX, 196 S.},
      year         = {2019},
      note         = {RWTH Aachen, Diss., 2019},
      abstract     = {Information technology is approaching the era of artificial
                      intelligence. New computing architectures are required to
                      cope with the huge amount of data that has to be processed
                      in all types of cognitive applications. This requires
                      dedicated energy efficient solutions on the level of the
                      computing hardware. The new concepts of neuromorphic
                      computing(NC), like artificial neural networks (ANNs) and
                      computation in memory (CIM), aim to overcome the limitations
                      of classical computers based on von Neumann architecture.
                      Redox-type resistive random access memory (ReRAM) devices
                      are intensively investigated for NC applications due to
                      their non-volatility and energy efficiency, process
                      compatibility with standard complementary metal oxide
                      semiconductor (CMOS) technology, and the ability for device
                      scaling and three-dimensional (3D) integration. The variety
                      of applications requests for different desired properties of
                      the ReRAM devices ranging from an analog-type programmable
                      multilevel behavior to a binary-type switching at high
                      resistance ratio and with linear resistance states. ReRAM
                      research today focuses on devices built of metal oxide
                      layers with nanometer thickness sandwiched between a
                      chemically inert electrode like Pt or TiN and a chemically
                      reactive electrode. The precise thickness control is
                      achieved by vapor phase deposition techniques, in
                      particular, atomic layer deposition (ALD). However, some
                      basic issues like switching stability and resistance
                      variability are still obstacles on the way towards massive
                      integration. One of the efforts to improve the device
                      performance is the use of combinations of two metal oxides
                      layers, so called bilayer oxide stacks. The two different
                      metal oxide layers are selected regarding their insulation
                      resistance and oxidation enthalpy. Here, especially the
                      bilayer ReRAM stack of TiO$_{2}$ and Al$_{2}$O$_{3}$ has
                      drawn attention of researches worldwide. TiO$_{2}$ belongs
                      to the materials integrated into ReRAM devices since the
                      early start in the beginning of this millennium. However,
                      most of the single-layer TiO$_{2}$ devices lack stability in
                      the standard valence change mechanism (VCM)-type filamentary
                      switching behavior and suffer from a too high residual
                      leakage current. One approach for improvement is the
                      addition of an Al$_{2}$O$_{3}$ barrier layer into the
                      TiO$_{2}$ ReRAM device. So far, in the scientific
                      literature, there is no clear consensus if this type of
                      Al$_{2}$O$_{3}$/TiO$_{2}$ bilayer cells reveal a standard
                      VCM-type filamentary switching or an area-dependent
                      switching behavior. [...]},
      cin          = {PGI-10 / PGI-7 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-10-20170113 / I:(DE-Juel1)PGI-7-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/862756},
}