000863096 001__ 863096
000863096 005__ 20210130001827.0
000863096 0247_ $$2doi$$a10.1016/j.sse.2019.03.003
000863096 0247_ $$2ISSN$$a0038-1101
000863096 0247_ $$2ISSN$$a1879-2405
000863096 0247_ $$2WOS$$aWOS:000466840600016
000863096 037__ $$aFZJ-2019-03210
000863096 041__ $$aEnglish
000863096 082__ $$a620
000863096 1001_ $$0P:(DE-Juel1)165984$$aSchüffelgen, Peter$$b0$$eCorresponding author
000863096 245__ $$aSignatures of induced superconductivity in AlOx-capped topological heterostructures
000863096 260__ $$aOxford [u.a.]$$bPergamon, Elsevier Science$$c2019
000863096 3367_ $$2DRIVER$$aarticle
000863096 3367_ $$2DataCite$$aOutput Types/Journal article
000863096 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1559900453_31933
000863096 3367_ $$2BibTeX$$aARTICLE
000863096 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000863096 3367_ $$00$$2EndNote$$aJournal Article
000863096 520__ $$aIn order to access exotic Dirac and Majorana states in (Bi,Sb)-based topological insulators (TIs), the physical surface of those crystals should not be exposed to air. 2–3 nm of in situ deposited Al on top of pristine TI thin films immediately oxidizes after taking the sample to ambient conditions. The native AlOx provides a favorable hard capping, which preserves the topological surface states during ex situ device fabrication. Here, we present a process on how to construct superconductor – topological insulator – superconductor (S-TI-S) junctions from in situ capped thin films comprised of 15 nm Sb2Te3 on top of 6 nm Bi2Te3. The thicknesses of the Sb2Te3 and the Bi2Te3 layer allow us to precisely tune the Fermi level of the upper surface of the Sb2Te3 layer. The challenge is to provide a transparent interface between Sb2Te3 and the superconductive Nb, while assuring an AlOx-capped weak link in between two closely separated Nb electrodes. Low temperature experiments on our junctions provide evidence for charge transport mediated by coherent Andreev states. Magnetic field dependent measurements yielded Fraunhofer-like patterns, whose periodicities are in good agreement with the effective areas of the respective junctions. Transmission electron micrographs of the narrowest junction confirm a crystalline and capped weak link. Our results provide the first reported signatures of induced superconductivity in S-TI-S junctions, which are capped by native AlOx. The presented process allows for accessing S-TI hybrid devices via magnetic flux, while assuring in situ conserved weak links. This makes as-prepared junctions a promising platform for proposed flux-controllable Majorana devices.
000863096 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
000863096 588__ $$aDataset connected to CrossRef
000863096 65027 $$0V:(DE-MLZ)SciArea-120$$2V:(DE-HGF)$$aCondensed Matter Physics$$x0
000863096 65017 $$0V:(DE-MLZ)GC-120-2016$$2V:(DE-HGF)$$aInformation and Communication$$x0
000863096 7001_ $$0P:(DE-Juel1)167347$$aRosenbach, Daniel$$b1
000863096 7001_ $$0P:(DE-HGF)0$$aPang, Yuan$$b2
000863096 7001_ $$0P:(DE-HGF)0$$aKampmeier, Jörn$$b3
000863096 7001_ $$0P:(DE-Juel1)130811$$aLuysberg, Martina$$b4
000863096 7001_ $$0P:(DE-Juel1)169107$$aKibkalo, Lidia$$b5
000863096 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b6
000863096 7001_ $$0P:(DE-HGF)0$$aVeldhuis, Dick$$b7
000863096 7001_ $$0P:(DE-HGF)0$$aBrinkman, Alexander$$b8
000863096 7001_ $$0P:(DE-Juel1)159564$$aLu, Li$$b9
000863096 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b10
000863096 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b11
000863096 773__ $$0PERI:(DE-600)2012825-3$$a10.1016/j.sse.2019.03.003$$gVol. 155, p. 111 - 116$$p111 - 116$$tSolid state electronics$$v155$$x0038-1101$$y2019
000863096 909CO $$ooai:juser.fz-juelich.de:863096$$pVDB
000863096 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165984$$aForschungszentrum Jülich$$b0$$kFZJ
000863096 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)167347$$aForschungszentrum Jülich$$b1$$kFZJ
000863096 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b3$$kFZJ
000863096 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130811$$aForschungszentrum Jülich$$b4$$kFZJ
000863096 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)169107$$aForschungszentrum Jülich$$b5$$kFZJ
000863096 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich$$b6$$kFZJ
000863096 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128634$$aForschungszentrum Jülich$$b10$$kFZJ
000863096 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich$$b11$$kFZJ
000863096 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000863096 9141_ $$y2019
000863096 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000863096 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSOLID STATE ELECTRON : 2017
000863096 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000863096 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000863096 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000863096 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000863096 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000863096 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000863096 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000863096 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000863096 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000863096 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000863096 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000863096 920__ $$lyes
000863096 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000863096 9201_ $$0I:(DE-Juel1)ER-C-1-20170209$$kER-C-1$$lPhysik Nanoskaliger Systeme$$x1
000863096 980__ $$ajournal
000863096 980__ $$aVDB
000863096 980__ $$aI:(DE-Juel1)PGI-9-20110106
000863096 980__ $$aI:(DE-Juel1)ER-C-1-20170209
000863096 980__ $$aUNRESTRICTED