TY  - JOUR
AU  - Dai, Y.
AU  - Schubert, J.
AU  - Trellenkamp, S.
AU  - Mussler, G.
AU  - Wördenweber, R.
TI  - Synaptic-like conductivity and plasticity in epitaxially strained SrTiO 3 films
JO  - Journal of applied physics
VL  - 125
IS  - 24
SN  - 1089-7550
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2019-03538
SP  - 245106 -
PY  - 2019
AB  - In this work we use epitaxial strain and an asymmetric electrode design to engineer the conductivity of SrTiO3 thin films in order to use them as active components in planar artificial synaptic devices. First, the tensile strain imposed by the rare-earth scandate substrate on epitaxial grown SrTiO3 films results in a significant increase of the conductivity of the SrTiO3. Second, a further enhancement of the conductivity is obtained by the use of Ti/Pt electrodes. Finally, the asymmetric electrode design consisting of a flat and a tapered electrode ensures the asymmetric response and plasticity of electronic synapse.  The modifications of the conductivity are explained in terms of changes in the density and mobility of oxygen vacancies. The resulting electronic synapses (e-synapse) show memristor behavior as well as the plasticity of the signal which both are essential characteristics of a synapse. Similar to the synaptic long-term and short-term potentiation/depression, our SrTiO3 e-synapses show two different types of plasticity,  a fast process associated with the ionic dipole formation (relaxation time in the 100 ps regime) and a slow process defined by the mobility of oxygen vacancies (relaxation time of several seconds).
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000474439600019
DO  - DOI:10.1063/1.5093138
UR  - https://juser.fz-juelich.de/record/863484
ER  -