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@ARTICLE{Dai:863484,
      author       = {Dai, Y. and Schubert, J. and Trellenkamp, S. and Mussler,
                      G. and Wördenweber, R.},
      title        = {{S}ynaptic-like conductivity and plasticity in epitaxially
                      strained {S}r{T}i{O} 3 films},
      journal      = {Journal of applied physics},
      volume       = {125},
      number       = {24},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2019-03538},
      pages        = {245106 -},
      year         = {2019},
      abstract     = {In this work we use epitaxial strain and an asymmetric
                      electrode design to engineer the conductivity of SrTiO3 thin
                      films in order to use them as active components in planar
                      artificial synaptic devices. First, the tensile strain
                      imposed by the rare-earth scandate substrate on epitaxial
                      grown SrTiO3 films results in a significant increase of the
                      conductivity of the SrTiO3. Second, a further enhancement of
                      the conductivity is obtained by the use of Ti/Pt electrodes.
                      Finally, the asymmetric electrode design consisting of a
                      flat and a tapered electrode ensures the asymmetric response
                      and plasticity of electronic synapse. The modifications of
                      the conductivity are explained in terms of changes in the
                      density and mobility of oxygen vacancies. The resulting
                      electronic synapses (e-synapse) show memristor behavior as
                      well as the plasticity of the signal which both are
                      essential characteristics of a synapse. Similar to the
                      synaptic long-term and short-term potentiation/depression,
                      our SrTiO3 e-synapses show two different types of
                      plasticity, a fast process associated with the ionic dipole
                      formation (relaxation time in the 100 ps regime) and a slow
                      process defined by the mobility of oxygen vacancies
                      (relaxation time of several seconds).},
      cin          = {ICS-8},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ICS-8-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000474439600019},
      doi          = {10.1063/1.5093138},
      url          = {https://juser.fz-juelich.de/record/863484},
}