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000863858 0247_ $$2doi$$a10.1103/PhysRevMaterials.3.073802
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000863858 1001_ $$0P:(DE-HGF)0$$aLefler, Benjamin M.$$b0
000863858 245__ $$aReconfigurable lateral anionic heterostructures in oxide thin films via lithographically defined topochemistry
000863858 260__ $$aCollege Park, MD$$bAPS$$c2019
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000863858 520__ $$aLaterally structured materials can exhibit properties uniquely suited for applications in electronics, magnetoelectric memory, photonics, and nanoionics. Here, a patterning approach is presented that combines the precise geometric control enabled by lithography with topochemical anionic manipulation of complex oxide films. Utilizing oxidation and fluorination reactions, striped patterns of SrFeO2.5/SrFeO3,SrFeO2.5/SrFeO2F, and SrFeO3/SrFeO2F have been prepared with lateral periodicities of 200, 20, and 4 μm. Coexistence of the distinct chemical phases is confirmed through x-ray diffraction, optical and photoemission microscopies, and optical spectroscopy. The lateral heterostructures exhibit highly anisotropic electronic transport and also enable transience and regeneration of patterns through reversible redox reactions. This approach can be broadly applied to a variety of metal-oxide systems, enabling chemically reconfigurable lateral heterostructures tailored for specific electronic, optical, ionic, thermal, or magnetic functionalities.
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000863858 7001_ $$0P:(DE-Juel1)165376$$aDuchon, Tomas$$b1$$ufzj
000863858 7001_ $$0P:(DE-HGF)0$$aKarapetrov, Goran$$b2
000863858 7001_ $$0P:(DE-HGF)0$$aWang, Jiayi$$b3
000863858 7001_ $$0P:(DE-Juel1)130948$$aSchneider, Claus M.$$b4
000863858 7001_ $$0P:(DE-HGF)0$$aMay, Steven J.$$b5$$eCorresponding author
000863858 773__ $$0PERI:(DE-600)2898355-5$$a10.1103/PhysRevMaterials.3.073802$$gVol. 3, no. 7, p. 073802$$n7$$p073802$$tPhysical review materials$$v3$$x2475-9953$$y2019
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