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@INBOOK{Wrdenweber:864064,
author = {Wördenweber, Roger and Dai, Yang},
title = {{S}train {E}ngineering of {S}r{T}i{O}3},
address = {New York},
publisher = {Nova Science Publishers, Inc.},
reportid = {FZJ-2019-03973},
isbn = {978-1-53615-437-5},
series = {Materials Science and Technologies},
pages = {101-155},
year = {2019},
comment = {Strontium Titanate: Synthesis, Properties and Uses},
booktitle = {Strontium Titanate: Synthesis,
Properties and Uses},
abstract = {Due to their tendency to form ionic states, transition
metal oxides and especially SrTiO3 exhibit extraordinary
ferroelectric properties. However, they typically exhibit
these extraordinary properties close to the ferroelectric
phase transition temperature, which usually deviates
significantly room temperature. The question arises as to
whether, and how, these extraordinary properties can be
utilized. It is therefore of major interest to engineer
these materials to fully exploit and understand their
potential, and to make them suitable or more suitable for
various applications.One method of engineering the
properties of these materials is to use mechanical strain.
In particular, epitaxial strain, which is automatically
generated in epitaxial films grown on lattice-mismatched
substrates, allows crystalline oxides to be elastically
strained up to percent levels. Under such strain, the
properties of the transition metal oxides can be altered
significantly.In this article, we review the use of
epitaxial strain to modify the ferroelectric, electronic,
and structural properties of SrTiO3. We discuss how the
ferroelectric properties can be tuned systematically by
strain. This includes the tuning of the ferroelectric
transition temperature, permittivity, and the type of
ferroelectricity. We demonstrate that these epitaxially
strained films typically represent textbook-like relaxor
ferroelectrics and are highly tunable. Furthermore, we show
that even the conductance of the nominally insulating
material can be modified by epitaxial strain. With adequate
strain, SrTiO3 not only becomes semiconductor-like, it also
exhibits an “electronic plasticity”, which is of
interest for applications ranging from memristor to
neuromorphic devices such as artificial synapses
(e-synapses). The examples discussed demonstrate how elastic
epitaxial strain represents an exciting option for
engineering and fine-tuning the properties of SrTiO3 thin
films.},
cin = {ICS-8},
cid = {I:(DE-Juel1)ICS-8-20110106},
pnm = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
pid = {G:(DE-HGF)POF3-523},
typ = {PUB:(DE-HGF)7},
url = {https://juser.fz-juelich.de/record/864064},
}