% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Schulthei:864391,
      author       = {Schultheiß, J. and Kungl, H. and Koruza, J.},
      title        = {{I}nfluence of crystallographic structure on polarization
                      reversal in polycrystalline ferroelectric/ferroelastic
                      materials},
      journal      = {Journal of applied physics},
      volume       = {125},
      number       = {17},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2019-04183},
      pages        = {174101 -},
      year         = {2019},
      abstract     = {Polarization reversal is the most fundamental physical
                      process in ferroelectrics and directly or indirectly
                      influences all functional properties of these materials.
                      While this process is influenced by various intrinsic
                      material’s properties and external boundary conditions,
                      arguably one of the most dominant parameters is the
                      material’s crystallographic structure. In this work, the
                      influence of the crystallographic structure on the
                      polarization reversal was investigated on the model
                      ferroelectric system Pb(Zr,Ti)O3 using simultaneous
                      time-dependent polarization and strain measurements. This
                      method enabled one to extend the understanding beyond the
                      widely investigated relationship between the structure and
                      coercive fields. Polarization reversal was described by
                      three regimes, which represent a sequence of well-defined
                      non-180° and 180° switching events. The crystallographic
                      structure was found to largely influence the mobility of the
                      non-180° domain walls during the first switching regime,
                      the amplitude of negative strain, and the broadness of the
                      transition between the first and the second switching
                      regimes, as well as the speed of the second (main) switching
                      regime. The observed changes could be related to the amount
                      of possible polarization directions, distribution of the
                      local electric fields, and strain mismatch at domain wall
                      junctions influenced by the lattice distortion. Moreover,
                      activation fields for the first and the second regimes were
                      experimentally determined for the investigated series of
                      Pb(Zr,Ti)O3 samples. Besides providing insight into
                      fundamental mechanisms of polarization reversal, these
                      results can also be used as input parameters for
                      micromechanical or stochastic models},
      cin          = {IEK-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-9-20110218},
      pnm          = {131 - Electrochemical Storage (POF3-131)},
      pid          = {G:(DE-HGF)POF3-131},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000467257200017},
      doi          = {10.1063/1.5081086},
      url          = {https://juser.fz-juelich.de/record/864391},
}