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000864661 1001_ $$0P:(DE-HGF)0$$aHan, Qinghua$$b0
000864661 245__ $$aTransient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
000864661 260__ $$aOxford [u.a.]$$bPergamon, Elsevier Science$$c2019
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000864661 520__ $$aSteep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed for the steep slope. We found that the sub-thermal SS degrades with the cycling measurements, which is assumed to be caused by the trap charging in the ferroelectric oxide layer. The tradeoff between polarization and charge trapping is responsible for the subthreshold behavior of the device.
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000864661 7001_ $$0P:(DE-HGF)0$$aAleksa, Paulus$$b1
000864661 7001_ $$0P:(DE-HGF)0$$aTromm, Thomas Carl Ulrich$$b2
000864661 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b3
000864661 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b4$$ufzj
000864661 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b5$$eCorresponding author
000864661 773__ $$0PERI:(DE-600)2012825-3$$a10.1016/j.sse.2019.03.037$$gVol. 159, p. 71 - 76$$p71 - 76$$tSolid state electronics$$v159$$x0038-1101$$y2019
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