TY  - JOUR
AU  - Han, Qinghua
AU  - Aleksa, Paulus
AU  - Tromm, Thomas Carl Ulrich
AU  - Schubert, Jürgen
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
JO  - Solid state electronics
VL  - 159
SN  - 0038-1101
CY  - Oxford [u.a.]
PB  - Pergamon, Elsevier Science
M1  - FZJ-2019-04359
SP  - 71 - 76
PY  - 2019
AB  - Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed for the steep slope. We found that the sub-thermal SS degrades with the cycling measurements, which is assumed to be caused by the trap charging in the ferroelectric oxide layer. The tradeoff between polarization and charge trapping is responsible for the subthreshold behavior of the device.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000471258000011
DO  - DOI:10.1016/j.sse.2019.03.037
UR  - https://juser.fz-juelich.de/record/864661
ER  -