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@ARTICLE{Han:864661,
      author       = {Han, Qinghua and Aleksa, Paulus and Tromm, Thomas Carl
                      Ulrich and Schubert, Jürgen and Mantl, Siegfried and Zhao,
                      Qing-Tai},
      title        = {{T}ransient negative capacitance and charge trapping in
                      {FDSOI} {MOSFET}s with ferroelectric {H}f{YOX}},
      journal      = {Solid state electronics},
      volume       = {159},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2019-04359},
      pages        = {71 - 76},
      year         = {2019},
      abstract     = {Steep slope negative capacitance MOSFETs with HfYOx
                      ferroelectric on FDSOI were experimentally demonstrated. An
                      average SS of 30 mV/dec was achieved over 3 decades of
                      drain current. The negative capacitance is believed to be a
                      transient phenomenon because a strong polarization switching
                      is needed for the steep slope. We found that the sub-thermal
                      SS degrades with the cycling measurements, which is assumed
                      to be caused by the trap charging in the ferroelectric oxide
                      layer. The tradeoff between polarization and charge trapping
                      is responsible for the subthreshold behavior of the device.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000471258000011},
      doi          = {10.1016/j.sse.2019.03.037},
      url          = {https://juser.fz-juelich.de/record/864661},
}