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@ARTICLE{Cppers:864682,
      author       = {Cüppers, Felix and Menzel, Stephan and Bengel and
                      Hardtdegen, Alexander and von Witzleben, M. and Böttger, U.
                      and Waser, R. and Hoffmann-Eifert, Susanne},
      title        = {{E}xploiting the switching dynamics of
                      {H}f{O}2/{T}i{O}x-based {R}e{RAM} devices for reliable
                      analogue memristive behaviour},
      journal      = {APL materials},
      volume       = {7},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2019-04376},
      pages        = {091105},
      year         = {2019},
      abstract     = {The utilization of bipolar-type memristive devices for the
                      realization of synaptic connectivity in neural networks
                      strongly depends on the ability of the devices for analog
                      conductance modulation under application of electrical
                      stimuli in the form of identical voltage pulses. Typically,
                      filamentary valence change mechanism (VCM)-type devices show
                      an abrupt SET and a gradual RESET switching behavior. Thus,
                      it is challenging to achieve an analog conductance
                      modulation during SET and RESET. Here, we show that analog
                      as well as binary conductance modulation can be achieved in
                      a Pt/HfO2/TiOx/Ti VCM cell by varying the operation
                      conditions. By analyzing the switching dynamics over many
                      orders of magnitude and comparing to a fully dynamic
                      switching model, the origin of the two different switching
                      modes is revealed. SET and RESET transition show a two-step
                      switching process: a fast conductance change succeeds a slow
                      conductance change. While the time for the fast conductance
                      change, the transition time, turns out to be
                      state-independent for a specific voltage, the time for the
                      slow conductance change, the delay time, is highly
                      state-dependent. Analog switching can be achieved if the
                      pulse time is a fraction of the transition time. If the
                      pulse time is larger than the transition time, the switching
                      becomes probabilistic and binary. Considering the effect of
                      the device state on the delay time in addition, a procedure
                      is proposed to find the ideal operation conditions for
                      analog switching},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / Advanced Computing Architectures
                      $(aca_20190115)$},
      pid          = {G:(DE-HGF)POF3-521 / $G:(DE-Juel1)aca_20190115$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000489245900005},
      doi          = {10.1063/1.5108654},
      url          = {https://juser.fz-juelich.de/record/864682},
}