TY  - JOUR
AU  - Sasioglu, Ersoy
AU  - Blügel, Stefan
AU  - Mertig, Ingrid
TI  - Proposal for Reconfigurable Magnetic Tunnel Diode and Transistor
JO  - ACS applied electronic materials
VL  - 1
IS  - 8
SN  - 2637-6113
CY  - Washington, DC
PB  - ACS Publications
M1  - FZJ-2019-04428
SP  - 1552 - 1559
PY  - 2019
AB  - We propose a reconfigurable magnetic tunnel diode and transistor based on half-metallic magnets (HMMs) and spin gapless semiconductors (SGSs). The two-terminal tunnel diode is composed of a HMM electrode and a SGS electrode separated by a thin insulating (I) tunnel barrier. Depending on the relative orientation of the magnetization of the electrodes, the magnetic tunnel diode allows the electrical current to pass in either one or the other direction. The three-terminal magnetic tunnel transistor consists of a HMM-I-SGS-I-HMM (emitter–base–collector) structure and can be switched on and off by application of a voltage to the base electrode and conducts current in both directions similar to conventional field-effect transistors. The unique energy band structure of the SGS-I-HMM junction prevents base–collector leakage currents and allows dual-mode operation of the transistor. Both devices can be configured by an external magnetic field or by the spin transfer torque switching. By employing the nonequilibrium Green’s function method combined with density functional theory, we demonstrate the reconfigurable rectification characteristics of the proposed diode based on sp-electron materials.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000496315000025
DO  - DOI:10.1021/acsaelm.9b00318
UR  - https://juser.fz-juelich.de/record/864761
ER  -