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@ARTICLE{Sasioglu:864761,
      author       = {Sasioglu, Ersoy and Blügel, Stefan and Mertig, Ingrid},
      title        = {{P}roposal for {R}econfigurable {M}agnetic {T}unnel {D}iode
                      and {T}ransistor},
      journal      = {ACS applied electronic materials},
      volume       = {1},
      number       = {8},
      issn         = {2637-6113},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2019-04428},
      pages        = {1552 - 1559},
      year         = {2019},
      abstract     = {We propose a reconfigurable magnetic tunnel diode and
                      transistor based on half-metallic magnets (HMMs) and spin
                      gapless semiconductors (SGSs). The two-terminal tunnel diode
                      is composed of a HMM electrode and a SGS electrode separated
                      by a thin insulating (I) tunnel barrier. Depending on the
                      relative orientation of the magnetization of the electrodes,
                      the magnetic tunnel diode allows the electrical current to
                      pass in either one or the other direction. The
                      three-terminal magnetic tunnel transistor consists of a
                      HMM-I-SGS-I-HMM (emitter–base–collector) structure and
                      can be switched on and off by application of a voltage to
                      the base electrode and conducts current in both directions
                      similar to conventional field-effect transistors. The unique
                      energy band structure of the SGS-I-HMM junction prevents
                      base–collector leakage currents and allows dual-mode
                      operation of the transistor. Both devices can be configured
                      by an external magnetic field or by the spin transfer torque
                      switching. By employing the nonequilibrium Green’s
                      function method combined with density functional theory, we
                      demonstrate the reconfigurable rectification characteristics
                      of the proposed diode based on sp-electron materials.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000496315000025},
      doi          = {10.1021/acsaelm.9b00318},
      url          = {https://juser.fz-juelich.de/record/864761},
}