Hauptseite > Publikationsdatenbank > Proposal for Reconfigurable Magnetic Tunnel Diode and Transistor > print

001     864761
005     20210130002718.0
024 7 _ |a 10.1021/acsaelm.9b00318
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082 _ _ |a 620
100 1 _ |a Sasioglu, Ersoy
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245 _ _ |a Proposal for Reconfigurable Magnetic Tunnel Diode and Transistor
260 _ _ |a Washington, DC
|c 2019
|b ACS Publications
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336 7 _ |a Journal Article
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520 _ _ |a We propose a reconfigurable magnetic tunnel diode and transistor based on half-metallic magnets (HMMs) and spin gapless semiconductors (SGSs). The two-terminal tunnel diode is composed of a HMM electrode and a SGS electrode separated by a thin insulating (I) tunnel barrier. Depending on the relative orientation of the magnetization of the electrodes, the magnetic tunnel diode allows the electrical current to pass in either one or the other direction. The three-terminal magnetic tunnel transistor consists of a HMM-I-SGS-I-HMM (emitter–base–collector) structure and can be switched on and off by application of a voltage to the base electrode and conducts current in both directions similar to conventional field-effect transistors. The unique energy band structure of the SGS-I-HMM junction prevents base–collector leakage currents and allows dual-mode operation of the transistor. Both devices can be configured by an external magnetic field or by the spin transfer torque switching. By employing the nonequilibrium Green’s function method combined with density functional theory, we demonstrate the reconfigurable rectification characteristics of the proposed diode based on sp-electron materials.
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700 1 _ |a Blügel, Stefan
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700 1 _ |a Mertig, Ingrid
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773 _ _ |a 10.1021/acsaelm.9b00318
|g Vol. 1, no. 8, p. 1552 - 1559
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