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000865334 0247_ $$2doi$$a10.21272/jnep.11(4).04032
000865334 0247_ $$2ISSN$$a2077-6772
000865334 0247_ $$2ISSN$$a2306-4277
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000865334 1001_ $$0P:(DE-HGF)0$$aPavlyuk, S. P.$$b0$$eCorresponding author
000865334 245__ $$aNonlinearity of Diffusion Resistors at High-density Current
000865334 260__ $$aSumy$$bSumsʹkyj Deržavnyj Univ.$$c2019
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000865334 520__ $$aThe paper presents the results of an experimental study of the current dependence of the resistance of diffusion resistors (DR) produced by the "silicon with dielectric insulation" technology, with different geometric characteristics, in particular, length and thickness, with a current density of 105 A/cm2. The analysis of the obtained results is carried out and three areas on the dependence of resistance on current R(I) are determined. The first region is an ohmic plot, on which the resistance value of the diffusion resistor is linearly dependent on the current value. The second region of the curve R(I) is characterized by the presence of strong nonlinearity, jumps and a sharp increase in the resistance of the DR, which happen due to the emergence of a high electric field in the DR. The third region on R(I) is characterized by a decrease in the value of the current resistance: the thicker the DR, the lower the peak value of the resistance. It is shown that the change in the length and the decrease in the thickness of the diffusion resistors lead to a change in the length of the linear region on R(I): the smaller the length, the lower the resistance of the sample and the longer the area of stable differential resistance. The region of the linearity of the diffusion resistor is determined on the basis of the differential resistance on the current dependence. The linearity of the resistance was defined as the region where the change in the differential resistance did not exceed 10 % of its value at some small electric field: the largest region of the linearity of the resistor is present in a specimen with a length of 2.4 μm and a thickness of 8.4 μm. The revealed characteristics of the behavior of the resistance of the diffusion resistor are due to the change in its physical characteristics as a result of significant self-heating.
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000865334 7001_ $$0P:(DE-HGF)0$$aGrygoruk, V. I.$$b1
000865334 7001_ $$0P:(DE-Juel1)174126$$aPetrychuk, Mykhaylo$$b2
000865334 7001_ $$0P:(DE-HGF)0$$aTelega, V. M.$$b3
000865334 7001_ $$0P:(DE-Juel1)128738$$aVitusevich, Svetlana$$b4
000865334 773__ $$0PERI:(DE-600)2627393-7$$a10.21272/jnep.11(4).04032$$gVol. 11, no. 4, p. 04032-1 - 04032-5$$n4$$p04032-1 - 04032-5$$tŽurnal nano- ta elektronnoi͏̈ fizyky$$v11$$x2077-6772$$y2019
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000865334 9141_ $$y2019
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