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@ARTICLE{Pavlyuk:865334,
      author       = {Pavlyuk, S. P. and Grygoruk, V. I. and Petrychuk, Mykhaylo
                      and Telega, V. M. and Vitusevich, Svetlana},
      title        = {{N}onlinearity of {D}iffusion {R}esistors at {H}igh-density
                      {C}urrent},
      journal      = {Žurnal nano- ta elektronnoi͏̈ fizyky},
      volume       = {11},
      number       = {4},
      issn         = {2077-6772},
      address      = {Sumy},
      publisher    = {Sumsʹkyj Deržavnyj Univ.},
      reportid     = {FZJ-2019-04834},
      pages        = {04032-1 - 04032-5},
      year         = {2019},
      abstract     = {The paper presents the results of an experimental study of
                      the current dependence of the resistance of diffusion
                      resistors (DR) produced by the "silicon with dielectric
                      insulation" technology, with different geometric
                      characteristics, in particular, length and thickness, with a
                      current density of 105 A/cm2. The analysis of the obtained
                      results is carried out and three areas on the dependence of
                      resistance on current R(I) are determined. The first region
                      is an ohmic plot, on which the resistance value of the
                      diffusion resistor is linearly dependent on the current
                      value. The second region of the curve R(I) is characterized
                      by the presence of strong nonlinearity, jumps and a sharp
                      increase in the resistance of the DR, which happen due to
                      the emergence of a high electric field in the DR. The third
                      region on R(I) is characterized by a decrease in the value
                      of the current resistance: the thicker the DR, the lower the
                      peak value of the resistance. It is shown that the change in
                      the length and the decrease in the thickness of the
                      diffusion resistors lead to a change in the length of the
                      linear region on R(I): the smaller the length, the lower the
                      resistance of the sample and the longer the area of stable
                      differential resistance. The region of the linearity of the
                      diffusion resistor is determined on the basis of the
                      differential resistance on the current dependence. The
                      linearity of the resistance was defined as the region where
                      the change in the differential resistance did not exceed 10
                      $\%$ of its value at some small electric field: the largest
                      region of the linearity of the resistor is present in a
                      specimen with a length of 2.4 μm and a thickness of 8.4
                      μm. The revealed characteristics of the behavior of the
                      resistance of the diffusion resistor are due to the change
                      in its physical characteristics as a result of significant
                      self-heating.},
      cin          = {ICS-8},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)ICS-8-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.21272/jnep.11(4).04032},
      url          = {https://juser.fz-juelich.de/record/865334},
}