%0 Journal Article
%A Wang, Yue
%A Kang, Kyung-Mun
%A Kim, Minjae
%A Lee, Hong-Sub
%A Waser, R.
%A Wouters, Dirk
%A Dittmann, Regina
%A Yang, J. Joshua
%A Park, Hyung-Ho
%T Mott-transition-based RRAM
%J Materials today
%V 28
%@ 1369-7021
%C Amsterdam [u.a.]
%I Elsevier Science
%M FZJ-2019-04932
%P 63 - 80
%D 2019
%X Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000484406100021
%R 10.1016/j.mattod.2019.06.006
%U https://juser.fz-juelich.de/record/865567