000865567 001__ 865567
000865567 005__ 20210130003054.0
000865567 0247_ $$2doi$$a10.1016/j.mattod.2019.06.006
000865567 0247_ $$2ISSN$$a1369-7021
000865567 0247_ $$2ISSN$$a1873-4103
000865567 0247_ $$2WOS$$aWOS:000484406100021
000865567 037__ $$aFZJ-2019-04932
000865567 082__ $$a670
000865567 1001_ $$0P:(DE-Juel1)171262$$aWang, Yue$$b0
000865567 245__ $$aMott-transition-based RRAM
000865567 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2019
000865567 3367_ $$2DRIVER$$aarticle
000865567 3367_ $$2DataCite$$aOutput Types/Journal article
000865567 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1573109755_21441
000865567 3367_ $$2BibTeX$$aARTICLE
000865567 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000865567 3367_ $$00$$2EndNote$$aJournal Article
000865567 520__ $$aResistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.
000865567 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000865567 588__ $$aDataset connected to CrossRef
000865567 7001_ $$0P:(DE-HGF)0$$aKang, Kyung-Mun$$b1
000865567 7001_ $$0P:(DE-HGF)0$$aKim, Minjae$$b2
000865567 7001_ $$0P:(DE-HGF)0$$aLee, Hong-Sub$$b3
000865567 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4
000865567 7001_ $$0P:(DE-HGF)0$$aWouters, Dirk$$b5
000865567 7001_ $$0P:(DE-Juel1)130620$$aDittmann, Regina$$b6
000865567 7001_ $$0P:(DE-HGF)0$$aYang, J. Joshua$$b7
000865567 7001_ $$0P:(DE-HGF)0$$aPark, Hyung-Ho$$b8$$eCorresponding author
000865567 773__ $$0PERI:(DE-600)2083513-9$$a10.1016/j.mattod.2019.06.006$$gVol. 28, p. 63 - 80$$p63 - 80$$tMaterials today$$v28$$x1369-7021$$y2019
000865567 909CO $$ooai:juser.fz-juelich.de:865567$$pVDB
000865567 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich$$b4$$kFZJ
000865567 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130620$$aForschungszentrum Jülich$$b6$$kFZJ
000865567 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000865567 9141_ $$y2019
000865567 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000865567 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000865567 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bMATER TODAY : 2017
000865567 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000865567 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000865567 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000865567 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000865567 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000865567 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000865567 915__ $$0StatID:(DE-HGF)9920$$2StatID$$aIF >= 20$$bMATER TODAY : 2017
000865567 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000865567 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000865567 980__ $$ajournal
000865567 980__ $$aVDB
000865567 980__ $$aI:(DE-Juel1)PGI-7-20110106
000865567 980__ $$aI:(DE-82)080009_20140620
000865567 980__ $$aUNRESTRICTED