TY  - JOUR
AU  - Wang, Yue
AU  - Kang, Kyung-Mun
AU  - Kim, Minjae
AU  - Lee, Hong-Sub
AU  - Waser, R.
AU  - Wouters, Dirk
AU  - Dittmann, Regina
AU  - Yang, J. Joshua
AU  - Park, Hyung-Ho
TI  - Mott-transition-based RRAM
JO  - Materials today
VL  - 28
SN  - 1369-7021
CY  - Amsterdam [u.a.]
PB  - Elsevier Science
M1  - FZJ-2019-04932
SP  - 63 - 80
PY  - 2019
AB  - Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000484406100021
DO  - DOI:10.1016/j.mattod.2019.06.006
UR  - https://juser.fz-juelich.de/record/865567
ER  -