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@ARTICLE{Wang:865567,
      author       = {Wang, Yue and Kang, Kyung-Mun and Kim, Minjae and Lee,
                      Hong-Sub and Waser, R. and Wouters, Dirk and Dittmann,
                      Regina and Yang, J. Joshua and Park, Hyung-Ho},
      title        = {{M}ott-transition-based {RRAM}},
      journal      = {Materials today},
      volume       = {28},
      issn         = {1369-7021},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2019-04932},
      pages        = {63 - 80},
      year         = {2019},
      abstract     = {Resistance random-access memory (RRAM) is a promising
                      candidate for both the next-generation non-volatile memory
                      and the key element of neural networks. In this article,
                      different types of Mott-transition (the transition between
                      the Mott insulator and metallic states) mechanisms and
                      Mott-transition-based RRAM are reviewed. Mott insulators and
                      some related doped systems can undergo an insulator-to-metal
                      transition or metal-to-insulator transition under various
                      excitation methods, such as pressure, temperature, and
                      voltage. A summary of these driving forces that induce
                      Mott-transition is presented together with their specific
                      transition mechanisms for different materials. This is
                      followed by a dynamics study of oxygen vacancy migration in
                      voltage-driven non-volatile Mott-transition and the related
                      resistive switching performance. We distinguish between a
                      filling-controlled Mott-transition, which corresponds to the
                      conventional valence change memory effect in
                      band-insulators, and a bandwidth-controlled Mott-transition,
                      which is due to a change in the bandwidth in the Mott
                      system. Last, different types of Mott-RRAM-based neural
                      network concepts are also discussed. The results in this
                      review provide guidelines for the understanding, and further
                      study and design of Mott-transition-based RRAM materials and
                      their correlated devices.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000484406100021},
      doi          = {10.1016/j.mattod.2019.06.006},
      url          = {https://juser.fz-juelich.de/record/865567},
}