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| 001 | 865567 | ||
| 005 | 20210130003054.0 | ||
| 024 | 7 | _ | |a 10.1016/j.mattod.2019.06.006 |2 doi |
| 024 | 7 | _ | |a 1369-7021 |2 ISSN |
| 024 | 7 | _ | |a 1873-4103 |2 ISSN |
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| 100 | 1 | _ | |a Wang, Yue |0 P:(DE-Juel1)171262 |b 0 |
| 245 | _ | _ | |a Mott-transition-based RRAM |
| 260 | _ | _ | |a Amsterdam [u.a.] |c 2019 |b Elsevier Science |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices. |
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| 700 | 1 | _ | |a Kang, Kyung-Mun |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Kim, Minjae |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Lee, Hong-Sub |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Waser, R. |0 P:(DE-Juel1)131022 |b 4 |
| 700 | 1 | _ | |a Wouters, Dirk |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Dittmann, Regina |0 P:(DE-Juel1)130620 |b 6 |
| 700 | 1 | _ | |a Yang, J. Joshua |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Park, Hyung-Ho |0 P:(DE-HGF)0 |b 8 |e Corresponding author |
| 773 | _ | _ | |a 10.1016/j.mattod.2019.06.006 |g Vol. 28, p. 63 - 80 |0 PERI:(DE-600)2083513-9 |p 63 - 80 |t Materials today |v 28 |y 2019 |x 1369-7021 |
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