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@ARTICLE{Nallagatla:865568,
      author       = {Nallagatla, Venkata R. and Heisig, Thomas and Baeumer,
                      Christoph and Feyer, Vitaliy and Jugovac, Matteo and
                      Zamborlini, Giovanni and Schneider, Claus M. and Waser,
                      Rainer and Kim, Miyoung and Jung, Chang Uk and Dittmann,
                      Regina},
      title        = {{T}opotactic {P}hase {T}ransition {D}riving {M}emristive
                      {B}ehavior},
      journal      = {Advanced materials},
      volume       = {31},
      number       = {40},
      issn         = {1521-4095},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2019-04933},
      pages        = {1903391 -},
      year         = {2019},
      abstract     = {Redox‐based memristive devices are one of the most
                      attractive candidates for future nonvolatile memory
                      applications and neuromorphic circuits, and their
                      performance is determined by redox processes and the
                      corresponding oxygen‐ion dynamics. In this regard,
                      brownmillerite SrFeO2.5 has been recently introduced as a
                      novel material platform due to its exceptional oxygen‐ion
                      transport properties for resistive‐switching memory
                      devices. However, the underlying redox processes that give
                      rise to resistive switching remain poorly understood. By
                      using X‐ray absorption spectromicroscopy, it is
                      demonstrated that the reversible redox‐based topotactic
                      phase transition between the insulating brownmillerite
                      phase, SrFeO2.5, and the conductive perovskite phase,
                      SrFeO3, gives rise to the resistive‐switching properties
                      of SrFeOx memristive devices. Furthermore, it is found that
                      the electric‐field‐induced phase transition spreads over
                      a large area in (001) oriented SrFeO2.5 devices, where
                      oxygen vacancy channels are ordered along the in‐plane
                      direction of the device. In contrast, (111)‐grown SrFeO2.5
                      devices with out‐of‐plane oriented oxygen vacancy
                      channels, reaching from the bottom to the top electrode,
                      show a localized phase transition. These findings provide
                      detailed insight into the resistive‐switching mechanism in
                      SrFeOx‐based memristive devices within the framework of
                      metal–insulator topotactic phase transitions.},
      cin          = {PGI-7 / PGI-6 / JARA-FIT / PGI-10},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31441160},
      UT           = {WOS:000483160600001},
      doi          = {10.1002/adma.201903391},
      url          = {https://juser.fz-juelich.de/record/865568},
}