001     865568
005     20220930130220.0
024 7 _ |a 10.1002/adma.201903391
|2 doi
024 7 _ |a 0935-9648
|2 ISSN
024 7 _ |a 1521-4095
|2 ISSN
024 7 _ |a 2128/23122
|2 Handle
024 7 _ |a pmid:31441160
|2 pmid
024 7 _ |a WOS:000483160600001
|2 WOS
037 _ _ |a FZJ-2019-04933
082 _ _ |a 660
100 1 _ |a Nallagatla, Venkata R.
|0 0000-0002-4454-2819
|b 0
245 _ _ |a Topotactic Phase Transition Driving Memristive Behavior
260 _ _ |a Weinheim
|c 2019
|b Wiley-VCH
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1572948073_23390
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a Redox‐based memristive devices are one of the most attractive candidates for future nonvolatile memory applications and neuromorphic circuits, and their performance is determined by redox processes and the corresponding oxygen‐ion dynamics. In this regard, brownmillerite SrFeO2.5 has been recently introduced as a novel material platform due to its exceptional oxygen‐ion transport properties for resistive‐switching memory devices. However, the underlying redox processes that give rise to resistive switching remain poorly understood. By using X‐ray absorption spectromicroscopy, it is demonstrated that the reversible redox‐based topotactic phase transition between the insulating brownmillerite phase, SrFeO2.5, and the conductive perovskite phase, SrFeO3, gives rise to the resistive‐switching properties of SrFeOx memristive devices. Furthermore, it is found that the electric‐field‐induced phase transition spreads over a large area in (001) oriented SrFeO2.5 devices, where oxygen vacancy channels are ordered along the in‐plane direction of the device. In contrast, (111)‐grown SrFeO2.5 devices with out‐of‐plane oriented oxygen vacancy channels, reaching from the bottom to the top electrode, show a localized phase transition. These findings provide detailed insight into the resistive‐switching mechanism in SrFeOx‐based memristive devices within the framework of metal–insulator topotactic phase transitions.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef
700 1 _ |a Heisig, Thomas
|0 P:(DE-Juel1)169605
|b 1
700 1 _ |a Baeumer, Christoph
|0 P:(DE-Juel1)159254
|b 2
700 1 _ |a Feyer, Vitaliy
|0 P:(DE-Juel1)145012
|b 3
700 1 _ |a Jugovac, Matteo
|0 P:(DE-Juel1)169309
|b 4
700 1 _ |a Zamborlini, Giovanni
|0 P:(DE-Juel1)162281
|b 5
700 1 _ |a Schneider, Claus M.
|0 P:(DE-Juel1)130948
|b 6
700 1 _ |a Waser, Rainer
|0 0000-0002-9080-8980
|b 7
700 1 _ |a Kim, Miyoung
|0 P:(DE-HGF)0
|b 8
700 1 _ |a Jung, Chang Uk
|0 P:(DE-HGF)0
|b 9
700 1 _ |a Dittmann, Regina
|0 P:(DE-Juel1)130620
|b 10
|e Corresponding author
773 _ _ |a 10.1002/adma.201903391
|g Vol. 31, no. 40, p. 1903391 -
|0 PERI:(DE-600)1474949-x
|n 40
|p 1903391 -
|t Advanced materials
|v 31
|y 2019
|x 1521-4095
856 4 _ |u https://juser.fz-juelich.de/record/865568/files/Nallagatla_et_al-2019-Advanced_Material_OA.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/865568/files/Nallagatla_et_al-2019-Advanced_Material_OA.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:865568
|p openaire
|p open_access
|p OpenAPC_DEAL
|p driver
|p VDB
|p openCost
|p dnbdelivery
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)169605
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)159254
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)145012
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)169309
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)162281
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 6
|6 P:(DE-Juel1)130948
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 10
|6 P:(DE-Juel1)130620
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2019
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1160
|2 StatID
|b Current Contents - Engineering, Computing and Technology
915 _ _ |a IF >= 20
|0 StatID:(DE-HGF)9920
|2 StatID
|b ADV MATER : 2017
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
|b ADV MATER : 2017
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0310
|2 StatID
|b NCBI Molecular Biology Database
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a Nationallizenz
|0 StatID:(DE-HGF)0420
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Clarivate Analytics Master Journal List
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
920 1 _ |0 I:(DE-Juel1)PGI-6-20110106
|k PGI-6
|l Elektronische Eigenschaften
|x 1
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 2
920 1 _ |0 I:(DE-Juel1)PGI-10-20170113
|k PGI-10
|l JARA Institut Green IT
|x 3
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-Juel1)PGI-6-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a I:(DE-Juel1)PGI-10-20170113
980 _ _ |a APC
980 _ _ |a UNRESTRICTED
980 1 _ |a APC
980 1 _ |a FullTexts


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