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@INPROCEEDINGS{Hensling:865640,
      author       = {Hensling, Felix and Heisig, Thomas and Raab, Nicolas and
                      Du, Hongchu and Bäumer, Christoph and Dittmann, Regina},
      title        = {{T}ailoring and switching performance of resistive
                      switching {S}r{T}i{O}3 devices by {S}r{O} interlayere
                      engineering},
      reportid     = {FZJ-2019-04991},
      year         = {2019},
      month         = {Jul},
      date          = {2019-07-08},
      organization  = {MEMRISYS, Dresden (Germany), 8 Jul
                       2019 - 11 Jul 2019},
      subtyp        = {Other},
      cin          = {PGI-7 / JARA-FIT / ER-C-2},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/865640},
}