000865872 001__ 865872
000865872 005__ 20210130003205.0
000865872 0247_ $$2Handle$$a2128/23301
000865872 0247_ $$2ISSN$$a1866-1777
000865872 020__ $$a978-3-95806-424-9
000865872 037__ $$aFZJ-2019-05158
000865872 041__ $$aEnglish
000865872 1001_ $$0P:(DE-Juel1)165926$$aHensling, Felix V. E.$$b0$$eCorresponding author$$gmale$$ufzj
000865872 245__ $$aDefect engineering in oxide thin films$$f- 2019-11-12
000865872 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2019
000865872 300__ $$a10, 164 S.
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000865872 4900_ $$aSchriften des Forschungszentrums Jülich. Reihe Information / Information$$v59
000865872 502__ $$aRWTH Aachen, Diss., 2019$$bDissertation$$cRWTH Aachen$$d2019
000865872 520__ $$aTransition metal oxides constitute one of the most interesting material classes due to their wide variety of interesting and unusual properties. Often these properties are closely related to their defect structure. Within the transition metal oxide community SrTiO$_{3}$ is often referred to as a model material due to its well known defect chemistry. Therefore, in this work the possibilities of defect engineering are considered for this model material and the resulting properties are utilized for a highly interesting application: Resistive switching of SrTiO$_{3}$ in a metal insulator metal structure, a field of research where defects are key for the basic operation principle. The interest in transition metal oxides has been accompanied by an increased use of pulsed laser deposition, since it is a powerful and versatile method to achieve epitaxial complex metal oxide thin films. [...]
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