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@ARTICLE{Khler:865947,
      author       = {Köhler, Malte and Pomaska, Manuel and Zamchiy, Alexandr
                      and Lambertz, Andreas and Duan, Weiyuan and Lentz, Florian
                      and Li, Shenghao and Kirchartz, Thomas and Finger, Friedhelm
                      and Rau, Uwe and Ding, Kaining},
      title        = {{O}ptimization of {T}ransparent {P}assivating {C}ontact for
                      {C}rystalline {S}ilicon {S}olar {C}ells},
      journal      = {IEEE journal of photovoltaics},
      volume       = {10},
      number       = {1},
      issn         = {2156-3381},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-05213},
      pages        = {46-53},
      year         = {2020},
      abstract     = {A highly transparent front contact layer system for
                      crystalline silicon (c-Si) solar cells is investigated and
                      optimized. This contact system consists of a wet-chemically
                      grown silicon tunnel oxide, a hydrogenated microcrystalline
                      silicon carbide [SiO 2 /µc-SiC:H( n )] prepared by hot-wire
                      chemical vapor deposition (HWCVD), and a sputter-deposited
                      indium doped tin oxide. Because of the exclusive use of very
                      high bandgap materials, this system is more transparent for
                      the solar light than state of the art amorphous (a-Si:H) or
                      polycrystalline silicon contacts. By investigating the
                      electrical conductivity of the µc-SiC:H( n ) and the
                      influence of the hot-wire filament temperature on the
                      contact properties, we find that the electrical conductivity
                      of µc-SiC:H( n ) can be increased by 12 orders of magnitude
                      to a maximum of 0.9 S/cm due to an increased doping
                      density and crystallite size. This optimization of the
                      electrical conductivity leads to a strong decrease in
                      contact resistivity. Applying this SiO 2 /µc-SiC:H( n )
                      transparent passivating front side contact to crystalline
                      solar cells with an a-Si:H/c-Si heterojunction back contact
                      we achieve a maximum power conversion efficiency of $21.6\%$
                      and a short-circuit current density of 39.6 mA/cm 2 . All
                      devices show superior quantum efficiency in the short
                      wavelength region compared to the reference cells with
                      a-Si:H/c-Si heterojunction front contacts. Furthermore,
                      these transparent passivating contacts operate without any
                      post processing treatments, e.g., forming gas annealing or
                      high-temperature recrystallization.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000535673700006},
      doi          = {10.1109/JPHOTOV.2019.2947131},
      url          = {https://juser.fz-juelich.de/record/865947},
}