000865992 001__ 865992
000865992 005__ 20210329100148.0
000865992 0247_ $$2Handle$$a2128/23299
000865992 0247_ $$2ISSN$$a1866-1807
000865992 020__ $$a978-3-95806-423-2
000865992 037__ $$aFZJ-2019-05253
000865992 041__ $$aEnglish
000865992 1001_ $$0P:(DE-Juel1)167375$$aGospodaric, Pika -> Gospodaric, Pika (FZJ: pi.gospodaric@fz-juelich.de / PGI-6)$$b0$$eCorresponding author$$ufzj
000865992 245__ $$aCurrent-induced magnetization switching in a model epitaxial Fe/Au bilayer$$f- 2019-11-12
000865992 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2019
000865992 300__ $$avi, 120, XXXVIII S.
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000865992 3367_ $$02$$2EndNote$$aThesis
000865992 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1573545622_2410
000865992 3367_ $$2DRIVER$$adoctoralThesis
000865992 4900_ $$aSchriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies$$v202
000865992 502__ $$aUniversität Duisburg, 2019$$bDr.$$cUniversität Duisburg$$d2019
000865992 520__ $$aIn electronics, the application of novel spintronic three-terminal memory devices is proposed to facilitate further improvements of the performance of electronic components. A promising write-mechanism in a spintronic memory is based on the purely electricalswitching of the magnetization by $\textit{spin-orbit torque}$ (SOT) that can occur, for example, at the interface of heavy metal (HM)/ferromagnetic metal (FM) bilayers. This thesis presents a study of the epitaxial model HM/FM system Au(4 nm)/Fe(1- 1.5 nm)/MgO(001) using magneto-transport measurements and Kerr microscopy. The Au/Fe bilayers were photolithographically patterned into Hall bars in order to study their magnetic and magneto-transport properties. The Au/Fe bilayer Hall bars on MgO(001) substrate exhibit a strong in-plane easy magnetization axis and a cubic magnetic anisotropy in the film plane dominated by the magneto-crystalline term of the Fe(001) layer. In the chosen geometry of the samples the easy magnetization directions coincide with the extrema of the transversal voltage induced by the planar Hall effect (PHE). Therefore, a switching of the magnetization from one easy direction to another can be detected by measuring the PHE-voltage. Furthermore, Kerr microscopy revealed the formation of stripe-shaped magnetic domains separated by 90$^\circ$ domain walls aligned perpendicular to the Hall bar. A combined measurement of PHE-voltage and acquisition of Kerr images has shown that the measured PHE-voltage is most considerably affected by the domain configuration within the central area of the Hall cross. Based on this findings, the influence of electrical currents on the magnetization in the Fe(001) layer was investigated via measurements of the PHE combined with Kerr microscopy. At room temperature, a current density beyond 10$^{7}$ A/cm$^{2}$ induces an Oersted field, which in the Fe(001) layer points in-plane in the direction perpendicular to the long axis of the Hall bar and can exceed the coercive field B$_{c}$=0.65$\pm$0.05 mT for the 90$^\circ$ switch of the magnetization. Moreover, a current density beyond 1.4$\cdot$10$^{7}$ A/cm$^{2}$ with an alternating polarity can be employed for reproducible electrical switching of the magnetization in the Au/Fe/MgO(001) Hall bars between multiple stable states. Kerr microscopy confirmed that a variation of the applied current density changes the domain structure at the Hall bar cross. The change of the domain structure scales with the applied current density and can be read-out as a change in the PHE-voltage. The PHE measurements at T<50 K indicate a presence of an additional current-induced field up to 2.5 mT in the direction normal to the film surface.
000865992 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
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000865992 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000865992 9141_ $$y2019
000865992 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)167375$$aForschungszentrum Jülich$$b0$$kFZJ
000865992 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000865992 920__ $$lyes
000865992 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
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