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@ARTICLE{Riwar:866001,
      author       = {Riwar, R.-P. and Catelani, G.},
      title        = {{E}fficient quasiparticle traps with low dissipation
                      through gap engineering},
      journal      = {Physical review / B},
      volume       = {100},
      number       = {14},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2019-05261},
      pages        = {144514},
      year         = {2019},
      abstract     = {Quasiparticles represent an intrinsic source of
                      perturbation for superconducting qubits, leading to both
                      dissipation of the qubit energy and dephasing. Recently, it
                      has been shown that normal-metal traps may efficiently
                      reduce the quasiparticle population and improve the qubit
                      lifetime, provided the trap surpasses a certain
                      characteristic size. Moreover, while the trap itself
                      introduces new relaxation mechanisms, they are not expected
                      to harm state-of-the-art transmon qubits under the condition
                      that the traps are not placed too close to extremal
                      positions where electric fields are high. Here we study a
                      different type of trap, realized through gap engineering. We
                      find that gap-engineered traps relax the remaining
                      constraints imposed on normal metal traps. First, the
                      characteristic trap size, above which the trap is efficient,
                      is reduced with respect to normal metal traps, such that
                      here, strong traps are possible in smaller devices. Second,
                      the losses caused by the trap are now greatly reduced,
                      providing more flexibility in trap placement. The latter
                      point is of particular importance, since for efficient
                      protection from quasiparticles, the traps ideally should be
                      placed close to the active parts of the qubit device, where
                      electric fields are typically high.},
      cin          = {PGI-11 / PGI-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-11-20170113 / I:(DE-Juel1)PGI-2-20110106},
      pnm          = {144 - Controlling Collective States (POF3-144)},
      pid          = {G:(DE-HGF)POF3-144},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000491990400004},
      doi          = {10.1103/PhysRevB.100.144514},
      url          = {https://juser.fz-juelich.de/record/866001},
}