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@ARTICLE{Li:866098,
      author       = {Li, Huimin and Duan, Weiyuan and Lambertz, Andreas and
                      Hupkes, Jurgen and Ding, Kaining and Rau, Uwe and Astakhov,
                      Oleksandr},
      title        = {{I}nfluence of {R}oom {T}emperature {S}puttered
                      {A}l-{D}oped {Z}inc {O}xide on {P}assivation {Q}uality in
                      {S}ilicon {H}eterojunction {S}olar {C}ells},
      journal      = {IEEE journal of photovoltaics},
      volume       = {9},
      number       = {6},
      issn         = {2156-3403},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-05317},
      pages        = {1485 - 1491},
      year         = {2019},
      abstract     = {Al-doped zinc oxide (AZO) is a potential candidate to
                      substitute tin-doped indium oxide in silicon heterojunction
                      (SHJ) solar cells due to its low cost and low ecological
                      impact. The AZO, sputtered at room temperature (RT), is of
                      particular interest because of low thermal budget and
                      potential for high throughput production with the
                      well-established industrial methods. In SHJ solar cells,
                      high effective carrier lifetime prerequisite for the high
                      open-circuit voltage is achieved with surface passivation by
                      intrinsic amorphous silicon layers followed by doped silicon
                      layers. The passivation quality may be affected by the
                      subsequent sputtering of an AZO layer especially at RT. In
                      this article, we investigated the influence of the AZO
                      sputtering and postdeposition annealing on the effective
                      carrier lifetime in symmetrical silicon layer stacks with n-
                      or p-type doped silicon layers and solar cell precursors. It
                      has been found that the effective carrier lifetime
                      significantly decreased after AZO sputtering at RT. The
                      detrimental effect of AZO sputtering is substrate
                      temperature dependent and is smaller or even absent at
                      elevated temperatures. However, postdeposition annealing,
                      equivalent to the Ag paste curing, mostly recovered the
                      effective carrier lifetime in the symmetrical stacks as well
                      as in the cell precursors. Finally, an aperture area
                      efficiency of $21.2\%$ has been achieved for the 19 mm × 19
                      mm SHJ solar cell prepared with room temperature sputtered
                      AZO.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000504310400003},
      doi          = {10.1109/JPHOTOV.2019.2933185},
      url          = {https://juser.fz-juelich.de/record/866098},
}