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@ARTICLE{Andr:866537,
      author       = {Andrä, Michael and Funck, Carsten and Raab, Nicolas and
                      Rose, Marc‐André and Vorokhta, Mykhailo and Dvorˇák,
                      Filip and Šmíd, Brˇetislav and Matolín, Vladimír and
                      Mueller, David N. and Dittmann, Regina and Waser, R. and
                      Menzel, Stephan and Gunkel, Felix},
      title        = {{E}ffect of {C}ationic {I}nterface {D}efects on {B}and
                      {A}lignment and {C}ontact {R}esistance in {M}etal/{O}xide
                      {H}eterojunctions},
      journal      = {Advanced electronic materials},
      volume       = {6},
      number       = {1},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2019-05627},
      pages        = {1900808 -},
      year         = {2020},
      abstract     = {Heterojunctions between high‐work‐function metals and
                      metal oxides typically lead to Schottky‐type transport
                      barriers resulting from charge transfer between the
                      neighboring materials. These yield versatile electronic
                      functionality exploited for current rectification,
                      memristive behavior, or photocatalysis. Height, width, and
                      shape of the interfacial transport barrier are strongly
                      affected by charge screening via ionic defects, which are
                      often extremely difficult to probe. The ionic nature of a
                      variable contact resistance in heterojunctions between
                      Nb‐doped SrTiO3 (Nb:SrTiO3) and platinum is explored. A
                      control of cationic vacancy defects at the interface is
                      achieved by different annealing procedures in oxidizing and
                      reducing conditions before establishing Pt/Nb:SrTiO3
                      heterojunctions. Detailed analysis of electronic transport
                      across the heterojunctions reveal significantly varied
                      transport barriers resulting from the cationic defect
                      structure at the interface. These findings are supported by
                      conductive‐tip atomic force microscopy and in situ
                      photoemission spectroscopy showing diminished conductivity
                      of the Nb:SrTiO3 surface and the formation of an insulating
                      surface skin layer after oxygenation. At high doping level,
                      oxygen stoichiometry cannot explain the observed behavior.
                      The increased transport barrier height is therefore linked
                      to strontium vacancy defects. The tailored cation disorder
                      yields access to the ionic control of electronic transport
                      in functional oxide heterojunctions.},
      cin          = {PGI-7 / JARA-FIT / PGI-6 / JARA-HPC},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-6-20110106 / $I:(DE-82)080012_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524) / Modelling
                      the Valency Change Memory Effect in Resistive Switching
                      Random Access Memory (RRAM) $(jpgi70_20120501)$},
      pid          = {G:(DE-HGF)POF3-524 / $G:(DE-Juel1)jpgi70_20120501$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000496844200001},
      doi          = {10.1002/aelm.201900808},
      url          = {https://juser.fz-juelich.de/record/866537},
}