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@ARTICLE{Bhm:867547,
      author       = {Böhm, Benny and Fallarino, Lorenzo and Pohl, Darius and
                      Rellinghaus, Bernd and Nielsch, Kornelius and Kiselev,
                      Nikolai S. and Hellwig, Olav},
      title        = {{A}ntiferromagnetic domain wall control via surface spin
                      flop in fully tunable synthetic antiferromagnets with
                      perpendicular magnetic anisotropy},
      journal      = {Physical review / B},
      volume       = {100},
      number       = {14},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2019-06170},
      pages        = {140411},
      year         = {2019},
      abstract     = {Antiferromagnetic (AF) domain walls have recently attracted
                      revived attention, not only in the emerging field of AF
                      spintronics, but also more specifically for offering fast
                      domain wall velocities and dynamic excitations up to the
                      terahertz frequency regime. Here, we introduce an approach
                      to nucleate and stabilize an AF domain wall in a synthetic
                      antiferromagnet (SAF). We present experimental and
                      micromagnetic studies of the magnetization reversal in
                      [(Co/Pt)X−1/Co/Ir]N−1(Co/Pt)X SAFs, where
                      interface-induced perpendicular magnetic anisotropy (PMA)
                      and AF interlayer exchange coupling (IEC) are completely
                      controlled via the individual layer thicknesses within the
                      multilayer stack. By combining strong PMA with even stronger
                      AF-IEC, the SAF reveals a collective response to an external
                      magnetic field applied normal to the surface, and we
                      stabilize the characteristic surface spin-flop (SSF) state
                      for an even number N of AF-coupled (Co/Pt)X−1/Co
                      multilayer blocks. In the SSF state our system provides a
                      well-controlled and fully tunable vertical AF domain wall,
                      easy to integrate as no single-crystal substrates are
                      required and with uniform two-dimensional magnetization in
                      the film plane for further functionalization options, such
                      as lateral patterning via lithography.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000491259900002},
      doi          = {10.1103/PhysRevB.100.140411},
      url          = {https://juser.fz-juelich.de/record/867547},
}