TY  - JOUR
AU  - Li, Shenghao
AU  - Pomaska, Manuel
AU  - Hoß, Jan
AU  - Lossen, Jan
AU  - Pennartz, Frank
AU  - Nuys, Maurice
AU  - Hong, Ruijiang
AU  - Schmalen, Andreas
AU  - Wolff, Johannes
AU  - Finger, Friedhelm
AU  - Rau, Uwe
AU  - Ding, Kaining
TI  - Poly-Si/SiO x /c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition
JO  - Applied physics letters
VL  - 114
IS  - 15
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2019-06421
SP  - 153901
PY  - 2019
AB  - Hot-wire chemical vapor deposition (HWCVD) was utilized to develop a fast and high quality a-Si:H thin film fabrication method for poly-Si/SiOx carrier selective passivating contacts targeting at n-type passivated emitter rear totally diffused crystalline silicon solar cells. The microstructure and hydrogen content of the a-Si:H thin films were analyzed by Fourier-transform infrared spectroscopy in order to understand the influence of film properties on passivation and conductivity. Dense layers were found to be beneficial for good passivation. On the other hand, blistering appeared as a-Si:H layers became more and more dense. However, by adjusting the SiH4 flow rate and the substrate heater temperature, blistering of a-Si:H could be avoided. A suitable process window was found and firing-stable implied open circuit voltage (iVoc) of up to 738 mV was achieved. In addition to high iVoc, a low contact resistivity of 0.034 Ω cm2 was also achieved. The deposition rate of the a-Si:H layers was 7 Å/s by using HWCVD, which is one order of magnitude higher than the deposition rate reported using other deposition methods.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000465439100034
DO  - DOI:10.1063/1.5089650
UR  - https://juser.fz-juelich.de/record/867811
ER  -