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@ARTICLE{Li:867811,
      author       = {Li, Shenghao and Pomaska, Manuel and Hoß, Jan and Lossen,
                      Jan and Pennartz, Frank and Nuys, Maurice and Hong, Ruijiang
                      and Schmalen, Andreas and Wolff, Johannes and Finger,
                      Friedhelm and Rau, Uwe and Ding, Kaining},
      title        = {{P}oly-{S}i/{S}i{O} x /c-{S}i passivating contact with
                      738 m{V} implied open circuit voltage fabricated by
                      hot-wire chemical vapor deposition},
      journal      = {Applied physics letters},
      volume       = {114},
      number       = {15},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2019-06421},
      pages        = {153901},
      year         = {2019},
      abstract     = {Hot-wire chemical vapor deposition (HWCVD) was utilized to
                      develop a fast and high quality a-Si:H thin film fabrication
                      method for poly-Si/SiOx carrier selective passivating
                      contacts targeting at n-type passivated emitter rear totally
                      diffused crystalline silicon solar cells. The microstructure
                      and hydrogen content of the a-Si:H thin films were analyzed
                      by Fourier-transform infrared spectroscopy in order to
                      understand the influence of film properties on passivation
                      and conductivity. Dense layers were found to be beneficial
                      for good passivation. On the other hand, blistering appeared
                      as a-Si:H layers became more and more dense. However, by
                      adjusting the SiH4 flow rate and the substrate heater
                      temperature, blistering of a-Si:H could be avoided. A
                      suitable process window was found and firing-stable implied
                      open circuit voltage (iVoc) of up to 738 mV was achieved.
                      In addition to high iVoc, a low contact resistivity of
                      0.034 Ω cm2 was also achieved. The deposition rate of
                      the a-Si:H layers was 7 Å/s by using HWCVD, which is one
                      order of magnitude higher than the deposition rate reported
                      using other deposition methods.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000465439100034},
      doi          = {10.1063/1.5089650},
      url          = {https://juser.fz-juelich.de/record/867811},
}