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@ARTICLE{Li:867812,
      author       = {Li, Shenghao and Pomaska, Manuel and Hoß, Jan and Lossen,
                      Jan and Ziegner, Mirko and Hong, Ruijiang and Finger,
                      Friedhelm and Rau, Uwe and Ding, Kaining},
      title        = {{I}n {S}itu-{D}oped {S}ilicon {T}hin {F}ilms for
                      {P}assivating {C}ontacts by {H}ot-{W}ire {C}hemical {V}apor
                      {D}eposition with a {H}igh {D}eposition {R}ate of 42 nm/min},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {11},
      number       = {33},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2019-06422},
      pages        = {30493 - 30499},
      year         = {2019},
      abstract     = {Hot-wire chemical vapor deposition was used to deposit in
                      situ-doped amorphous silicon layers for poly-Si/SiOx
                      passivating contacts at a high deposition rate of 42 nm/min.
                      We investigated the influence of a varied phosphine gas
                      (PH3) concentration during deposition on (i) the silicon
                      film properties and (ii) the passivating contact
                      performances. The microstructural film properties were
                      characterized before and after a high-temperature
                      crystallization step to transform amorphous silicon films
                      into polycrystalline silicon films. Before crystallization,
                      the silicon layers become less dense as the PH3
                      concentrations increase. After crystallization, an
                      increasing domain size is derived for higher PH3
                      concentrations. Sheet resistance is found to decrease as
                      domain size increased, and the correlation between mobility
                      and domain size was discussed. The performances of the
                      passivating contact were measured, and a firing stable open
                      circuit voltage of 732 mV, a contact resistivity of 8.1
                      mΩ·cm2, and a sheet resistance of 142 Ω/□ could be
                      achieved with the optimized PH3 concentration. In addition,
                      phosphorous doping tails into the crystalline silicon were
                      extracted to evaluate the Auger recombination of the
                      passivating contact.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31361110},
      UT           = {WOS:000482546000108},
      doi          = {10.1021/acsami.9b10360},
      url          = {https://juser.fz-juelich.de/record/867812},
}