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@ARTICLE{Zhou:867917,
      author       = {Zhou, Chongjian and Yu, Yuan and Zhang, Xiangzhao and
                      Cheng, Yudong and Xu, Jingtao and Lee, Yong Kyu and Yoo,
                      Byeongjun and Cojocaru‐Mirédin, Oana and Liu, Guiwu and
                      Cho, Sung‐Pyo and Wuttig, Matthias and Hyeon, Taeghwan and
                      Chung, In},
      title        = {{C}u {I}ntercalation and {B}r {D}oping to {T}hermoelectric
                      {S}n{S}e 2 {L}ead to {U}ltrahigh {E}lectron {M}obility and
                      {T}emperature‐{I}ndependent {P}ower {F}actor},
      journal      = {Advanced functional materials},
      volume       = {30},
      number       = {6},
      issn         = {1616-3028},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2019-06515},
      pages        = {1908405},
      year         = {2020},
      abstract     = {Due to its single conduction band nature, it is highly
                      challenging to enhance the power factor of SnSe2 by band
                      convergence. Here, it is reported that simultaneous Cu
                      intercalation and Br doping induce strong Cu–Br
                      interaction to connect SnSe2 layers, otherwise isolated, via
                      “electrical bridges.” Atom probe tomography analysis
                      confirms a strong attraction between Cu intercalants and Br
                      dopants in the SnSe2 lattice. Density functional theory
                      calculations reveal that this interaction delocalizes
                      electrons confined around SnSe covalent bonds and
                      enhances charge transfer across the SnSe2 slabs. These
                      effects dramatically increase electron mobility and
                      concentration. Polycrystalline SnCu0.005Se1.98Br0.02 shows
                      even higher electron mobility than pristine SnSe2 single
                      crystal and the theoretical expectation. This results in
                      significantly improved electrical conductivity without
                      reducing effective mass and Seebeck coefficient, thereby
                      leading to the highest power factor of ≈12 µW cm−1
                      K−2 to date for polycrystalline SnSe2 and SnSe. It even
                      surpasses the value for the state‐of‐the‐art n‐type
                      SnSe0.985Br0.015 single crystal at elevated temperatures.
                      Surprisingly, the achieved power factor is nearly
                      independent of temperature ranging from 300 to 773 K. The
                      engineering thermoelectric figure of merit ZTeng for
                      SnCu0.005Se1.98Br0.02 is ≈0.25 between 773 and 300 K, the
                      highest ZTeng ever reported for any form of SnSe2‐based
                      thermoelectric materials.},
      cin          = {PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000499713100001},
      doi          = {10.1002/adfm.201908405},
      url          = {https://juser.fz-juelich.de/record/867917},
}